Výsledky vyhledávání - "Cheol-kyu Lee"

GA-based algorithm for selecting optimal repair and rehabilitation methods for reinforced concrete (RC) bridge decks

Publikováno v: Automation in Construction. 16:153-164

Korean government agencies manage bridge structures at the network level using a Bridge Management System (BMS). One of the most important functions of the BMS is to provide the agencies with an effective decision making tool for managing bridges. Es

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8feb73f03bb040edec066295d0c00ad3
https://doi.org/10.1016/j.autcon.2006.03.001

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Integration Friendly Dual Metal Gate Technology Using Dual Thickness Metal Inserted Poly-Si Stacks (DT-MIPS)

Autor: Cheol-kyu Lee, Eun Ha Lee, Jong-Ho Lee, Hionsuck Baik, Mong sub Lee, Youngsu Chung, Nae-In Lee, Sung Kee Han, Ho-Kyu Kang, Yun Ki Choi, Young-Sub You, Hyung-Suk Jung, Hajin Lim, Jong-Bong Park

Publikováno v: 2007 IEEE Symposium on VLSI Technology.

We have successfully developed integration friendly dual metal gate process utilizing a dual thickness metal inserted poly-Si stacks (DT-MIPS) structure; poly-Si/TaN/HfON stacks for nMOS and poly-Si/capping metal layer(c-ML)/AlOx/TaN/HfON stacks for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::addd3f2b638b2d9f05be693ff9c4b954
https://doi.org/10.1109/vlsit.2007.4339690

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Highly Manufacturable Single Metal Gate Process Using Ultra-Thin Metal Inserted Poly-Si Stack (UT-MIPS)

Autor: Cheol-kyu Lee, Min-Joo Kim, Jong-Ho Lee, Hyung-Suk Jung, Young-Sub You, Young Su Chung, Ho-Kyu Kang, Hionsuck Baik, Hajin Lim, Sung Kee Han, Mong sub Lee, Nae In Lee, Eunha Lee

Publikováno v: 2006 International Electron Devices Meeting.

The authors have successfully developed a mass production friendly single metal gate process utilizing an ultra-thin metal inserted poly-Si stack (UT-MIPS) structure. First, the inserted metal gate thickness effects on device performances are careful

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a2b4619b61ccca2ba78077b45f374fbb
https://doi.org/10.1109/iedm.2006.346860

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Improved 1/f Noise Characteristics in Locally Strained Si CMOS Using Hydrogen-Controlled Stress Liners and Embedded SiGe

Autor: Hyun-Woo Lee, Tetsuji Ueno, Ho Lee, Heungsik Park, Cheol Kyu Lee, Hyunkyu Cho, Geum-Jong Bae, Hwa-Sung Rhee, Youn Hwa Jung, Nae-In Lee, Hion Suck Baik, Myung Sun Kim

Publikováno v: 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

This paper reports the first experimental demonstration of improved 1/f noise characteristics in a locally strained Si MOS through hydrogen-controlled stress liners and embedded SiGe (eSiGe). For NMOS, the high hydrogen density (1times1022cm-3) in th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::08f4c034dc52a318e94af7f286cd0f08
https://doi.org/10.1109/vlsit.2006.1705238

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Dual High-k Gate Dielectric Technology Using Selective AlOx Etch (SAE) Process with Nitrogen and Fluorine Incorporation

Autor: Cheol-kyu Lee, Jong-Ho Lee, Youngsu Chung, Hionsuck Baik, Yunseok Kim, Nae-In Lee, Hajin Lim, Seul-Gi Kim, Ho-Kyu Kang, Min-Joo Kim, Young-Sub You, Mi Young Yu, Mong sub Lee, Sung Kee Han, Hyung-Suk Jung

Publikováno v: 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

We propose a novel Vth, control method for HfSiON (or HfO2) with poly-Si and metal inserted poly-Si stacks (MIPS) gates. By using a selective AlOx etch (SAE) process, we successfully integrate dual high-k gate oxide scheme; HfSiO/poly-Si stack for nM

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::290527b97d90facc5eeb35d38d03da8b
https://doi.org/10.1109/vlsit.2006.1705267

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