Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Cheol-Goo Park"'
Autor:
Sung-Yeon Lee, Hyoungsik Nam, Hyun-Jun Yoon, Cheol-Goo Park, Du-Eung Yongin Kim, Jung-Hyeon Lee, Chun-Sup Kim, Beomsup Kim, J.G. Roh, Suyoun Lee, Doo-Sub Lee, Junha Lee, Churoo Park, Sung-Yong Cho, Taesub Jung
Publikováno v:
IEEE Journal of Solid-State Circuits. 33:1703-1710
A 64-Mbit bidirectional data strobed, double-data-rate SDRAM achieves a peak bandwidth of 2.56 GByte/s on a 64-bit-channel, 256-MByte memory system at V/sub cc/=3.3 V and T=25/spl deg/C. The circuit features are: (1) a bidirectional data strobing sch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea6c0f0f4dac1959074efa9ac9d3b3b6
https://doi.org/10.1109/4.726563
https://doi.org/10.1109/4.726563
Autor:
Gil-Shin Moon, Jeong-Don Lim, Hyang-ja Yang, Seung-Jun Bae, Dae Hyun Kim, Hye-Ran Kim, Woo-Seop Kim, Byeong-Cheol Kim, Dong-seok Kang, Cheol-Goo Park, Yong-Ki Cho, Yong-Jae Shin, Yun-Seok Yang, Gong-Heom Han, Young-Soo Sohn, Chang-Ho Shin, Min-Sang Park, Si-Hong Kim, Joo Sun Choi, sunyoung park, Ho-Seok Seol, Kwang-Il Park, Sam-Young Bang, Tae-Young Oh, Young-Ryeol Choi, Su-Yeon Doo, Young-Hyun Jun, Sang-hyup Kwak, Young-Sik Kim
Publikováno v:
ISSCC
Most DRAM interfaces such as GDDR5 and DDR3 use parallel single-ended signaling due to pin-count restriction and backward compatibility. Notwithstanding poor signal and power integrity issues, GDDR5 speed reached beyond 5Gb/s in recent years by utili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17f134797a9a27620a368d25d78b0da6
https://doi.org/10.1109/isscc.2011.5746414
https://doi.org/10.1109/isscc.2011.5746414
Autor:
Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Min-Sang Park, Ji-Hoon Lim, Yong-Ki Cho, Dae-Hyun Kim, Dong-Min Kim, Hye-Ran Kim, Hyun-Joong Kim, Jin-Hyun Kim, Jin-Kook Kim, Young-Sik Kim, Byeong-Cheol Kim, Sang-Hyup Kwak, Jae-Hyung Lee, Jae-Young Lee, Chang-Ho Shin, Yun-Seok Yang, Beom-Sig Cho, Sam-Young Bang, Hyang-Ja Yang, Young-Ryeol Choi, Gil-Shin Moon, Cheol-Goo Park, Seok-Won Hwang, Jeong-Don Lim, Kwang-Il Park, Joo Sun Choi, Young-Hyun Jun
Publikováno v:
2010 IEEE International Solid-State Circuits Conference - (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cc843d5d0e2c1ef2d41021d7b3bedcf
https://doi.org/10.1109/isscc.2010.5433889
https://doi.org/10.1109/isscc.2010.5433889
Autor:
Ki-Woong Yeom, Seung-Jun Bae, Seong-Jin Jang, Hye-Ran Kim, Dae-Hyun Chung, Cheol-Goo Park, Gil-Shin Moon, Hyang-ja Yang, Joo Sun Choi, Jae-Sung Kim, Jae-Young Lee, Min-Sang Park, Kyoung-Ho Kim, Kwang-ll Park, Dae Hyun Kim, Kang-Young Kim, Jingook Kim, Young-Hyun Jun, Yong-Jae Shin, Young-Soo Sohn, Sam-Young Bang, Si-Hong Kim, Jae-Hyung Lee, Kinam Kim, Ho-Kyung Lee, In-Soo Park
Publikováno v:
ISSCC
Demand for high-speed DRAM in graphics application pushes a single-ended I/O signaling to operate up to 6Gb/s. To maintain the speed increase, the GDDR5 specification shifts from GDDR3/4 with respect to forwarded clocking, data training for write and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f59fae5256fcdac88c998be8845e2e0
https://doi.org/10.1109/isscc.2008.4523165
https://doi.org/10.1109/isscc.2008.4523165
Autor:
Seung-Jun Bae, Young-Soo Sohn, Kwang-ll Park, Kyoung-Ho Kim, Dae-Hyun Chung, Jin-Gook Kim, Si-Hong Kim, Min-Sang Park, Jae-Hyung Lee, Sam-Young Bang, Ho-Kyung Lee, In-Soo Park, Jae-Sung Kim, Dae-Hyun Kim, Hye-Ran Kim, Yong-Jae Shin, Cheol-Goo Park, Gil-Shin Moon, Ki-Woong Yeom, Kang-Young Kim
Publikováno v:
2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers; 2008, p278-613, 336p