Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Cheol Soo Sone"'
Autor:
Kyoung Chan Kim, Suk Ho Yoon, Cheol Soo Sone, Yong Jo Park, Jeoung Wook Lee, Tae Geun Kim, Dong Ho Kim
Publikováno v:
Journal of Crystal Growth. 272:264-269
We propose a way of increasing overall efficiency of InGaN–GaN ultraviolet light-emitting diodes (UV LEDs) by placing a thin Si-doped AlGaN layer beneath the multiple quantum well (MQW). The AlGaN thin layer plays a role of tunneling barrier for th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffb28b077f88f9659edc0f2bca9fc471
https://doi.org/10.1016/j.jcrysgro.2004.08.100
https://doi.org/10.1016/j.jcrysgro.2004.08.100
Autor:
Hyung-Kun Kim, Jaehee Cho, Young S. Kim, Yongjo Park, Euijoon Yoon, Cheol-soo Sone, Shunichi Kubota
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 3:34-36
Wavelength down-converted white-light sources excited by near ultraviolet light-emitting diodes require specific phosphor properties in order to generate high-quality white light (namely, light with good color rendition and stability of color coordin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::690369b151ced8a526ef09e9ef1c1f76
https://doi.org/10.1002/pssr.200802261
https://doi.org/10.1002/pssr.200802261
Autor:
Erdmann Frederick Schubert, Jong Kyu Kim, Yongjo Park, Suk-ho Yoon, Tan Sakong, Min-Ho Kim, Martin F. Schubert, Joachim Piprek, Cheol-soo Sone, Qi Dai
Publikováno v:
2008 Conference on Lasers and Electro-Optics.
The physical origin of efficiency droop in GaN-based light-emitting diodes when driven with high current is systematically investigated. Based on our simulations and experimental results, a polarization-matched active region is proposed as the soluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7fb95b7d19c55ce35c42326ba896e9c
https://doi.org/10.1109/cleo.2008.4551109
https://doi.org/10.1109/cleo.2008.4551109
Autor:
Guan-Bo Lin, Qifeng Shan, Min-Ho Kim, Hyun Wook Shim, David S. Meyaard, Jaehee Cho, Cheol-soo Sone, E. Fred Schubert
Publikováno v:
Applied Physics Letters. 99:251115
The effect of the asymmetry in carrier concentration and mobility is studied in GaInN pn-junction light-emitting diodes (LEDs). We propose and present experimental evidence that the asymmetry in carrier concentration and mobility, and associated high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d968465406ea96beb735d7e983135c8
https://doi.org/10.1063/1.3671395
https://doi.org/10.1063/1.3671395
Autor:
Ho Sun Paek, Yong Jo Park, Cheol Soo Sone, Rak Jun Choi, Young Min Park, Yu Seung Kim, Hun Jae Chung, Jae Woong Han, E. Fred Schubert, Jong Kyu Kim, Min-Ho Kim
Publikováno v:
Applied Physics Letters. 95:241109
Multi-layer barrier structure is suggested as an alternative approach to single-layer polarization matching barrier structure for the reduction of efficiency droop. Time resolved photoluminescence measurement showed that polarization field was reduce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3cbf4e1fa98897b312c12367c077792
https://doi.org/10.1063/1.3276066
https://doi.org/10.1063/1.3276066
Autor:
Hun Jae Chung, Rak Jun Choi, Min Ho Kim, Jae Woong Han, Young Min Park, Yu Seung Kim, Ho Sun Paek, Cheol Soo Sone, Yong Jo Park, Jong Kyu Kim, Schubert, E. Fred
Publikováno v:
Applied Physics Letters; 12/14/2009, Vol. 95 Issue 24, p241109, 3p, 1 Color Photograph, 2 Graphs