Zobrazeno 1 - 10
of 1 126
pro vyhledávání: '"Cheol Seong, Hwang"'
Autor:
Kyung Seok Woo, Janguk Han, Su-in Yi, Luke Thomas, Hyungjun Park, Suhas Kumar, Cheol Seong Hwang
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract Information security and computing, two critical technological challenges for post-digital computation, pose opposing requirements – security (encryption) requires a source of unpredictability, while computing generally requires predictabi
Externí odkaz:
https://doaj.org/article/fd835305289b4eafbfda729cb705eb85
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
Designing a computing scheme to solve complex tasks as the big data field proliferates remains a challenge. Here, the authors present a probabilistic bit generation hardware built using the random nature of Cu x Te1−x /HfO2/Pt memristors capable of
Externí odkaz:
https://doaj.org/article/950d36ecf3184345965e48b0a0c49bdd
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Autor:
Kyung Do Kim, Yong Bin Lee, Suk Hyun Lee, In Soo Lee, Seung Kyu Ryoo, Seungyong Byun, Jae Hoon Lee, Hani Kim, Hyeon Woo Park, Cheol Seong Hwang
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 5, Pp n/a-n/a (2023)
Abstract This work investigates the evolution of the ferroelectric (FE) performance of the sputtered aluminum scandium nitride (AlScN) thin film, which has a high remanent polarization (Pr, > 100 µC cm−2) and coercive field (Ec, > 6 MV cm−1), wi
Externí odkaz:
https://doaj.org/article/77e05821247b40d29ab7837383209f98
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 5, Pp n/a-n/a (2023)
In‐memory computing using memristor‐based stateful logic reveals high efficiency in the computing paradigm where the memory and computation are colocated. Still, variations in the memristor induce reliability issues for practical applications. Pr
Externí odkaz:
https://doaj.org/article/76cc7636840a456abd0453fb72e62add
Autor:
Seung Soo Kim, Soo Kyeom Yong, Jihun Kim, Jin Myung Choi, Tae Won Park, Hyun Young Kim, Hae Jin Kim, Cheol Seong Hwang
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 3, Pp n/a-n/a (2023)
Abstract A hole‐type vertical structure is adopted to fabricate a vertically stacked resistive switching random access memory (ReRAM) array. The vertical configuration is more advantageous in lowering the process cost and increasing integration den
Externí odkaz:
https://doaj.org/article/3616e16c945b4aeab0153e149bd2b5e4
Autor:
Yan Cheng, Zhaomeng Gao, Kun Hee Ye, Hyeon Woo Park, Yonghui Zheng, Yunzhe Zheng, Jianfeng Gao, Min Hyuk Park, Jung-Hae Choi, Kan-Hao Xue, Cheol Seong Hwang, Hangbing Lyu
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
HfO2-based ferroelectric films are attracting a great deal of attention. Here, the authors conclude that the performance degradation and the possible rejuvenation are ascribed to the reversible transition between polar and antipolar phases.
Externí odkaz:
https://doaj.org/article/a3c17d53ddd74e79bf13620108134c18
Autor:
Yoon Ho Jang, Woohyun Kim, Jihun Kim, Kyung Seok Woo, Hyun Jae Lee, Jeong Woo Jeon, Sung Keun Shim, Janguk Han, Cheol Seong Hwang
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
Recently there has been an interest in utilising memristors as physical temporal kernels. Here, Jang et al demonstrate a physical temporal kernel using a memristor combined with a capacitor and resistor, where the additional circuit elements can be v
Externí odkaz:
https://doaj.org/article/5ae0334dfbfd4726836aa82657d7df91
Publikováno v:
Nano Select, Vol 2, Iss 6, Pp 1187-1207 (2021)
Abstract The ferroelectric field‐effect transistor (FeFET) is one of the leading contenders to succeed charge‐trap‐based flash memory (CTF) devices in the current vertically‐integrated NAND flash storage market. The operation of a FeFET is ba
Externí odkaz:
https://doaj.org/article/67c056b976b84b12a066b42961af055a
Publikováno v:
Advanced Intelligent Systems, Vol 4, Iss 8, Pp n/a-n/a (2022)
This work provides an off‐chip training method for a one‐selector‐one‐resistor (1S1R) crossbar array (CBA) device with wire resistance (rcc) and nonlinear conductance (g i,j) of 1S1R devices for hardware neural network (HNN) applications. An
Externí odkaz:
https://doaj.org/article/19cd9292bb9d478a902e8dc78014ba1d