Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Cheol Jun Kim"'
Autor:
Cheol Jun Kim, Jae Yeob Lee, Minkyung Ku, Tae Hoon Kim, Taehee Noh, Seung Won Lee, Ji‐Hoon Ahn, Bo Soo Kang
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract The learning accuracy of neuromorphic computing that mimics the biological brain, is affected by the conductance‐modulation characteristics of an artificial synapse. In ferroelectric‐based devices, these characteristics are implemented u
Externí odkaz:
https://doaj.org/article/67807649c2e244e9b32eadf5e994f40d
Autor:
Taewon Jin, Sanghyeon Kim, Jae-Hoon Han, Dae-Hwan Ahn, Seong Ui An, Tae Hyeon Noh, Xinkai Sun, Cheol Jun Kim, Juhyuk Park, Younghyun Kim
Publikováno v:
Nanoscale Advances. 5:1316-1322
We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors by introducing a non-volatile programmable ferroelectric material, HfZrO2 into the gate stack of the TFT.
Publikováno v:
Applied Physics Letters. 122:012901
We investigated the internal bias field and coercive field in a typical ferroelectric thin-film capacitor and simulated polarization switching dynamics using Euler's method. The simulation results agreed well with the experimental results and reflect
Publikováno v:
Nanomaterials, Vol 13, Iss 14, p 2146 (2023)
Dielectric layers are widely used in ferroelectric applications such as memory and negative capacitance devices. The wake-up and the split-up phenomena in the ferroelectric hafnia are well-known challenges in early-stage device reliability. We found
Externí odkaz:
https://doaj.org/article/633edba1008e439987c103627f632c4c