Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Cheol Ho Lim"'
Publikováno v:
Journal of the Korean Society for Aeronautical & Space Sciences. 51:281-289
Autor:
Cheol-Ho Lim, Ik-Hyeon Choi
Publikováno v:
Journal of the Korean Society for Aeronautical & Space Sciences. 41:967-974
Recently the authors had proposed the z-pinning patch concept to simply manufacture z-pinned composite structures at industrial production site and manufactured composite single-lap shear joint specimens using the concept. Through static tensile test
Autor:
Ik-Hyeon Choi, Cheol-Ho Lim
Publikováno v:
Journal of the Korean Society for Aeronautical & Space Sciences. 41:613-618
In this paper a new concept on z-pinning technology named by authors as `z-pinning patch` will be introduced, which advantage is easy application at manufacturing site of composite structures. Using the trial manufactured z-pinning patch, the z-pinne
Publikováno v:
Transactions of the Korean Society of Mechanical Engineers B. 36:979-988
The 3D structure of GDL for fuel cells was measured using high-resolution X-ray tomography in order to study material transport in the GDL. A computational algorithm has been developed to remove noise in the 3D image and construct 3D elements represe
Publikováno v:
Metals and Materials International. 14:433-436
In this study, the thermoelectric properties of 0.1 wt.% Cdl2-doped n-type Bi2Te2.7Sb0.3 compounds, fabrieated by SPS in a temperature range of 250°C to 350°C, were characterized. The density of the compounds was increased to approximately 100% of
Autor:
Jong Woo Lee, Hyoun Woo Kim, Jeong Whan Han, Mok Soon Kim, Byung Don Yoo, M.H. Kim, C.H. Lee, Cheol Ho Lim, Sun Keun Hwang, C. Lee, D.J. Chung, S.G. Park, S.G. Lee, B.H. O, J. Kim, S.P. Chang, S.H. Lee, Seung Yong Chai, Wan In Lee, S.E. Park, K. Kim, D.K. Choi, C.W. Chung
Publikováno v:
Materials Science Forum. 555:113-118
We present a study of the photoresist (PR) etching and the low-k materials damage using a ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N2/O2 flow rat
Publikováno v:
Materials Science Forum. :1122-1125
The microstructure and thermoelectrical properties of the 4wt% Te doped p-type Bi0.5Sb1.5Te3 compounds, fabricated by using spark plasma sintering in the temperature ranging from 250°C to 350°C, were characterized. The density of the sintered compo
Publikováno v:
Materials Science Forum. :390-393
In this study, we examined brazeability of Al5052 alloys using a Ag-28Cu insert metal in vacuum condition. A high frequency induction-heating vacuum hot press was used for the brazing. Under a static pressure of 0.5 MPa and a vacuum of 5×10-5 Torr,
Publikováno v:
Journal of Electronic Materials. 35:360-365
We studied the effects of deformation and annealing of n-type 90Bi2Te3-5Sb2Te3-5Sb2Se3 thermoelectric compound. Hot-extrusion was conducted to prepare the deformed compound and then this compound was annealed at 400°C for 1–24 hr. When the undoped
Publikováno v:
Key Engineering Materials. :875-880
P-type Bi0.5Sb1.5Te3 compounds doped with 3wt% Te were fabricated by spark plasma sintering and their mechanical and thermoelectric properties were investigated. The sintered compounds with the bending strength of more than 50MPa and the figure-of-me