Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Chenyuan Cai"'
Publikováno v:
Combustion Science and Technology. :1-20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22d92d9a7a5c60ef8dcb3997f9fdd161
https://doi.org/10.1080/00102202.2023.2203819
https://doi.org/10.1080/00102202.2023.2203819
Publikováno v:
International Journal of Clothing Science and Technology. 34:315-334
PurposeFully formed knitting technology is a cutting-edge technology in the design and production of knitted apparel. Using this technology and its supporting design system, a new development mode of fully formed knitted apparel with double-layer str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0c8e397ea486b1307c60418df98ef52
https://doi.org/10.1108/ijcst-08-2020-0133
https://doi.org/10.1108/ijcst-08-2020-0133
Autor:
Zhichuan Niu, Yahui Zhang, Renchao Che, Yi Shi, Chongyun Liang, Yunhao Zhao, Yu Zhang, Chenyuan Cai, Yuyang Wu, Yingqiang Xu, Yi Zhang
Publikováno v:
ACS Applied Materials & Interfaces. 13:27262-27269
Interfacial engineering plays a crucial role in regulating the quality and property of heterogeneous structures, especially for nanometer-scaled devices. However, traditional methods for interfacial modulation (IFM) generally treat all the interfaces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9a7ee0e6704ddbcfe8084a63f16e72f
https://doi.org/10.1021/acsami.1c04077
https://doi.org/10.1021/acsami.1c04077
Autor:
Xuebing Zhao, Xianhu Liu, Chenyuan Cai, Renchao Che, Fengqi Liu, Jinchuan Zhang, Jie Chen, Yunhao Zhao, Chongyun Liang, Yi Shi
Publikováno v:
ACS Applied Materials & Interfaces. 12:41950-41959
Effectively restraining random fluctuation of layer thickness (RFT) during the thin-film epitaxy plays an essential part in improving the quality of low-dimensional materials for device application. While it is already challenging to obtain an ideal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a21c1316b0e28660bb6d4a8cb7e9e51
https://doi.org/10.1021/acsami.0c11216
https://doi.org/10.1021/acsami.0c11216
Autor:
Guowei Wang, Zhichuan Niu, Xianhu Liu, Xuebing Zhao, Yunhao Zhao, Renchao Che, Liting Yang, Chang Faran, Chongyun Liang, Yuesheng Li, Yi Shi, Chenyuan Cai
Publikováno v:
Nano Research. 13:1536-1543
As the proportion of interfaces increases rapidly in nanomaterials, properties and quality of interfaces hugely impact the performance of advanced semiconductors. Here, the effect of interfaces is explored by comparatively studying two InAs/AlSb supe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84e8d8c10df686e9bb992cceffce8530
https://doi.org/10.1007/s12274-020-2764-2
https://doi.org/10.1007/s12274-020-2764-2
Publikováno v:
ACS Applied Nano Materials. 2:3323-3328
Two-dimensional (2D) band engineering within nanowires is realized by axial switching of crystal-phase from wurtzite to zinc blende and a lateral GaAs/AlGaAs core–shell structure. Band alignment between different phases/materials is investigated th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c1ab0b43f7be425b7913bd4b50197f9
https://doi.org/10.1021/acsanm.9b00692
https://doi.org/10.1021/acsanm.9b00692
Autor:
Zhichuan Niu, Xie Shengwen, Yi Zhang, Chenyuan Cai, Jin-Ming Shang, Cheng-Ao Yang, Ye Yuan, Haiqiao Ni, Yu Zhang, Shu-Shan Huang, Yingqiang Xu
Publikováno v:
Superlattices and Microstructures. 130:339-345
The 2.1-μm-wavelength InGaSb/AlGaAsSb/GaSb double quantum well lasers, exhibiting a high performance with the peak output power of 1.62 W and the maximum conversion efficiency of 27.5%, had been grown by molecular-beam-epitaxy (MBE). Digitally grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::129a16d2158bcf6856b3021520eaff16
https://doi.org/10.1016/j.spmi.2019.05.002
https://doi.org/10.1016/j.spmi.2019.05.002
Autor:
Junjie Guo, Xianguo Liu, Wenbin You, Wei Zeng, Xuefeng Yu, Yunhao Zhao, Xuefeng Zhang, Chenyuan Cai, Renchao Che, Yichao Lu
Publikováno v:
Journal of Magnetism and Magnetic Materials. 475:24-29
High permeability and high saturation magnetization are two key attributes to strong microwave absorption for magnetic loss composites, which depend on the chemical composition, particle size, surface profile, fabrication method, etc. However, it is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ff6a3cbbe13e479da5051a9ad07801a
https://doi.org/10.1016/j.jmmm.2018.11.045
https://doi.org/10.1016/j.jmmm.2018.11.045
Autor:
Chongyun Liang, Yunhao Zhao, Xuebing Zhao, Yingqiang Xu, Yi Zhang, Renchao Che, Yi Shi, Chenyuan Cai, Zhichuan Niu
Publikováno v:
Nanoscale. 11:21376-21385
Quantum tunnelling (QTN) devices show a promising future for energy saving and ultrafast operation thanks to the unprecedented development of two-dimensional materials. However, the immature techniques for device fabrication hamper severely their fur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35c1ac62b49b8356917282ed0a754333
https://doi.org/10.1039/c9nr03268a
https://doi.org/10.1039/c9nr03268a
Autor:
Xie Shengwen, Zhichuan Niu, Yunhao Zhao, Xuebing Zhao, Yu Zhang, Renchao Che, Chongyun Liang, Yingqiang Xu, Chenyuan Cai, Yuesheng Li, Yi Shi
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 15(27)
Interfaces in semiconductor heterostructures is of continuously greater significance in the trend of scaling materials down to the atomic limit. Since atoms tend to behave more irregularly around interfaces than in internal materials, accurate energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce9e483badf50f6fd24b0dd77e62c7c7
https://pubmed.ncbi.nlm.nih.gov/31018045
https://pubmed.ncbi.nlm.nih.gov/31018045