Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Chenxi Fei"'
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-7 (2017)
Abstract La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid therma
Externí odkaz:
https://doaj.org/article/17d5605980d8492095d8c1e827ad6295
Publikováno v:
AIP Advances, Vol 6, Iss 6, Pp 065224-065224-7 (2016)
A thin Al2O3 interlayer deposited between La2O3 layer and Si substrate was used to scavenge the interfacial layer (IL) by blocking the out-diffusion of substrate Si. Some advantages and disadvantages of this method were discussed in detail. Evident I
Externí odkaz:
https://doaj.org/article/13cf308ab9e04640b7f4fc9e3ed4ffd8
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:4702-4705
La x Al y O films were grown on p-Si substrates by atomic layer deposition technique with different La and Al precursor pulse ratios. Then atomic concentrations and band alignments of the films were determined from X-ray photoelectron spectroscopy me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5d2215c2f176a250a2995913933726b
https://doi.org/10.1007/s10854-016-6111-z
https://doi.org/10.1007/s10854-016-6111-z
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:803-807
Amorphous LaAlO3 films were grown on p-type Si substrate by atomic layer deposition using O3 and H2O as the oxygen source, respectively. Band alignments of LaAlO3 films were analyzed by X-ray photoelectron spectroscopy measurements using the photoemi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93301fd6b18b6b66bd0113a12ae618ea
https://doi.org/10.1007/s10854-016-5593-z
https://doi.org/10.1007/s10854-016-5593-z
Publikováno v:
Journal of Computational and Theoretical Nanoscience. 13:5242-5246
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d177a7b46fe5d660786493fa29f35ac
https://doi.org/10.1166/jctn.2016.5407
https://doi.org/10.1166/jctn.2016.5407
Publikováno v:
Journal of Materials Science: Materials in Electronics. 27:8550-8558
A comparative study of different sequences of two metal precursors [trimethylaluminum (TMA) and Tris(isopropylcyclopentadienyl) lanthanum (La(iPrCp)3)] for atomic layer deposition (ALD) lanthanum aluminum oxide (La2O3/Al2O3/Si) films is carried out.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b52effdfcc16c2a3e223938d6be5a4ca
https://doi.org/10.1007/s10854-016-4872-z
https://doi.org/10.1007/s10854-016-4872-z
Publikováno v:
Journal of Electronic Materials. 44:2592-2597
The annealing dependence of the optical properties of Nd2O3 films deposited by atomic layer deposition has been investigated by variable-angle spectroscopic ellipsometry (VASE). Based on VASE measurements, it is found that the refractive index and hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0fa6c99109270fd5c6e27f5e088f83e
https://doi.org/10.1007/s11664-015-3673-0
https://doi.org/10.1007/s11664-015-3673-0
Publikováno v:
Applied Physics A. 119:957-963
Optical properties of thin atomic layer-deposited HfO2 films grown by H2O and O3 are analyzed by variable angle spectroscopic ellipsometry. By investigating the dielectric constant, it is found that a higher real part of the dielectric constant (e 1)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93394e37e35a5ffc3ac570270384bcbc
https://doi.org/10.1007/s00339-015-9048-9
https://doi.org/10.1007/s00339-015-9048-9
Publikováno v:
Nuclear Science and Techniques. 28
The total dose effect of 60Co γ-rays on 0.8-μm H-gate partially depleted-silicon-on-insulator NMOS devices was investigated at different irradiation doses. The results show that the shift in saturation current at high dose rate is greater than that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b135a861bba2b7f02a6247e4b5a8048
https://doi.org/10.1007/s41365-017-0295-7
https://doi.org/10.1007/s41365-017-0295-7
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-4 (2017)
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-4 (2017)
The capacitance and leakage current properties of multilayer La2O3/Al2O3 dielectric stacks and LaAlO3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La2O3/Al2O3 stacks after post
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7635c8a1c1b975b544c69bb610ad80cc
https://doi.org/10.1186/s11671-017-2004-1
https://doi.org/10.1186/s11671-017-2004-1