Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Chenshuo Liu"'
Autor:
Aihu Jia, Xinyu Liu, Yuntao Guan, Yongxi Liu, Qianze Helian, Chenshuo Liu, Zheming Zhuang, Rongjie Kang
Publikováno v:
Machines, Vol 12, Iss 8, p 544 (2024)
Continuum robots, possessing great flexibility, can accomplish tasks in complex work scenes, regarded as an important direction in robotics. However, the current continuum robots are not satisfying enough in terms of fabrication and maintenance, and
Externí odkaz:
https://doaj.org/article/b236981dd39c45f3a9cb8f1773bd4d3b
Flavor Chemical Research on Different Bee Pollen Varieties Using Fast E-Nose and E-Tongue Technology
Publikováno v:
Foods, Vol 13, Iss 7, p 1022 (2024)
Bee pollen, derived from various plant sources, is renowned for its nutritional and bioactive properties, aroma, and taste. This study examined the bee pollen with the highest yield in China obtained from four plant species, namely Brassica campestri
Externí odkaz:
https://doaj.org/article/8faf7d9c171948abbcb837a470d888dd
Autor:
Liu Zhanlei, Yaxin Zhang, Chenshuo Liu, Shengchang Ji, Dai Jiangang, Junjie Liu, Cao Zhan, Lingyu Zhu
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 10:5132-5141
The study of wear-out mechanism of press-pack IGBTs (PPIs) is conducted insufficiently now. In this paper, both the numerical and experimental methods are utilized to investigate the wear-out mechanism of PPIs. After conducting an accelerated aging t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13898a4de3b8eac6f7fba6cc1bf725fb
https://doi.org/10.1109/jestpe.2021.3085590
https://doi.org/10.1109/jestpe.2021.3085590
Autor:
Zafar Alam, P.P. Bandyopadhyay, A.K. Basak, Bikash Chandra Behera, Marta Bogdan-Chudy, Akshay Chaudhari, Pei Chen, null Chetan, Mohd Danish, A.R. Dixit, Qihong Fang, Gourhari Ghosh, Sudarsan Ghosh, Munish Kumar Gupta, Faiz Iqbal, Sunil Jha, Grzegorz Królczyk, Mayank Kumar, A. Senthil Kumar, Jia Li, Chenshuo Liu, K. Bimla Mardi, Mozammel Mia, Piotr Niesłony, Chander Prakash, Alokesh Pramanik, Muhommad Azizur Rahman, P. Venkateswara Rao, Malarvizhi Sankaranarayanasamy, Neeraj Sharma, Ajay M. Sidpara, Yuanyuan Tian, Zhiwei Zhang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b29236982d5eac69c2adf3edff8e5fec
https://doi.org/10.1016/b978-0-12-819889-6.01002-9
https://doi.org/10.1016/b978-0-12-819889-6.01002-9
Publikováno v:
IEEE Transactions on Power Electronics. 34:7996-8007
The degradation of submodule (SM) insulated gate bipolar transistors (IGBTs) in a modular multilevel converter (MMC) can be monitored through their on -state voltages. This paper proposes a scheme to calculate the IGBT on -state voltages at rated cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84c15abdcb5322f75201e4602e7bb12f
https://doi.org/10.1109/tpel.2018.2879995
https://doi.org/10.1109/tpel.2018.2879995
Publikováno v:
2020 8th International Conference on Condition Monitoring and Diagnosis (CMD).
Because of the merits of no reactive power compensation and no commutation failure problem, Modular Multilevel Converter (MMC) technology is being applied in many scenarios, such as multi-terminal HVDC, offshore power transmission, and DC power distr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::078af111cdebb44a3575f064c9ad5cf4
https://doi.org/10.1109/cmd48350.2020.9287290
https://doi.org/10.1109/cmd48350.2020.9287290
Publikováno v:
2020 21st International Conference on Electronic Packaging Technology (ICEPT).
The third generation semiconductors, such as Silicon Carbide (SiC), are widely used in aerospace, automobile and other industries. It has a lot of characteristics such as wide band gap, high thermal conductivity and high bonding energy etc. Since its
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c2afcc269002dc8cbc08b12ba2ab6c4
https://doi.org/10.1109/icept50128.2020.9201908
https://doi.org/10.1109/icept50128.2020.9201908
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9783030316754
Insulated gate bipolar transistor (IGBT) is the critical component in Module multilevel converter (MMC) submodule and is aged under operating condition. As the voltage rating of MMC-HVDC power transmission continues raising, high voltage press-pack I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02ca35788671c120440b2068fd5a8971
https://doi.org/10.1007/978-3-030-31676-1_89
https://doi.org/10.1007/978-3-030-31676-1_89
Publikováno v:
2019 20th International Conference on Electronic Packaging Technology(ICEPT).
As the research on the 3rd generation semiconductor goes further, SiC wafer has gained popularity in the market, because its distinctive properties allows it to overcome the limitations of Si wafer, which enables SiC to contribute to the breakthrough
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::277e26702f96e824bff0198e6eb5d56c
https://doi.org/10.1109/icept47577.2019.245216
https://doi.org/10.1109/icept47577.2019.245216