Zobrazeno 1 - 10
of 360
pro vyhledávání: '"Chenot, S."'
Autor:
Aristegui, R., Lefebvre, P., Brimont, C., Guillet, T., Vladimirova, M., Paradisanos, I., Robert, C., Marie, X., Urbaszek, B., Chenot, S., Cordier, Y., Damilano, B.
Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced by deposit
Externí odkaz:
http://arxiv.org/abs/2306.04404
Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder
Autor:
Zuniga-Perez, Jesús, Kappei, Lars, Deparis, Christiane, Reveret, François, Grundmann, Marius, de Prado, Esther, Jamadi, O., Leymarie, J., Chenot, S., Leroux, M.
Nonpolar ZnO/ZnMgO-based optical microcavities have been grown on (10-10) m-plane ZnO substrates by plasma-assisted molecular beam epitaxy. Reflectivity measurements indicate an exponential increase of the cavity quality factor with the number of lay
Externí odkaz:
https://ul.qucosa.de/id/qucosa%3A23543
https://ul.qucosa.de/api/qucosa%3A23543/attachment/ATT-0/
https://ul.qucosa.de/api/qucosa%3A23543/attachment/ATT-0/
Autor:
Aristegui, R., Chiaruttini, F., Jouault, B., Lefebvre, P., Brimont, C., Guillet, T., Vladimirova, M., Chenot, S., Cordier, Y., Damilano, B.
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps i
Externí odkaz:
http://arxiv.org/abs/2203.13761
Autor:
Chiaruttini, F., Guillet, T., Brimont, C., Jouault, B., Lefebvre, P., Chenot, S., Cordier, Y., Damilano, B., Vladimirova, M.
Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confineme
Externí odkaz:
http://arxiv.org/abs/1902.02974
Publikováno v:
In Microelectronic Engineering 15 May 2023 277
Publikováno v:
Phys. Chem. Chem. Phys., 2017,19, 10350-10357
Orientation-dependent reactivity and band-bending are evidenced upon Ti deposition (1-10 \AA) on the polar ZnO(0001)-Zn and ZnO(000$\bar{1}$)-O surfaces. At the onset of the Ti deposition, a downward band-bending was observed on ZnO(000$\bar{1}$)-O w
Externí odkaz:
http://arxiv.org/abs/1805.10608
Autor:
Meriggio, E., Lazzari, R., Chenot, S., David, P., Méthivier, C., Carrier, X., Cabailh, G., Humblot, V.
Publikováno v:
In Applied Surface Science 1 November 2019 493:1134-1141
Autor:
Laurent, T., Sharma, R., Torres, J., Nouvel, P., Blin, S., Varani, L., Cordier, Y., Chmielowska, M., Chenot, S., Faurie, JP, Beaumont, B., Shiktorov, P., Starikov, E., Gruzinskis, V., Korotyevyev, V., Kochelap, V.
We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applie
Externí odkaz:
http://arxiv.org/abs/1105.3131
Akademický článek
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Autor:
Dussaigne, A., Barbier, F., Damilano, B., Chenot, S., Grenier, A., Papon, A. M., Samuel, B., Ben Bakir, B., Vaufrey, D., Pillet, J. C., Gasse, A., Ledoux, O., Rozhavskaya, M., Sotta, D.
Publikováno v:
Journal of Applied Physics; 10/7/2020, Vol. 128 Issue 13, p1-9, 9p