Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Chenming Calvin Hu"'
Autor:
Navid Paydavosi, Sriramkumar Venugopalan, Yogesh Singh Chauhan, Juan Pablo Duarte, Srivatsava Jandhyala, Ali M. Niknejad, Chenming Calvin Hu
Publikováno v:
IEEE Access, Vol 1, Pp 201-215 (2013)
Two turn-key surface potential-based compact models are developed to simulate multigate transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is developed to simulate double-, triple-, and all-around-gate FinFETs and
Externí odkaz:
https://doaj.org/article/3781c2c387c8420b8041b079e0b66c5c
Autor:
Srivatsava Jandhyala, Yogesh Singh Chauhan, Ali M. Niknejad, Navid Paydavosi, Chenming Calvin Hu, Sriramkumar Venugopalan, Juan Pablo Duarte
Publikováno v:
IEEE Access. 1:201-215
Two turn-key surface potential-based compact models are developed to simulate multigate transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is developed to simulate double-, triple-, and all-around-gate FinFETs and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fd858a86ef4caf60dda2527a03a16db
https://doi.org/10.1109/access.2013.2260816
https://doi.org/10.1109/access.2013.2260816
Publikováno v:
2015 73rd Annual Device Research Conference (DRC).
In this paper, 2D MOSFET operation of a fully-depleted double-gate bulk MoS 2 is studied at a quasi-flatband of the back-gate for the first time. Several key device parameters such as equivalent oxide thickness (EOT), carrier concentration, flatband
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca6bf6a939bd894299df4f09ce8d7b35
https://doi.org/10.1109/drc.2015.7175592
https://doi.org/10.1109/drc.2015.7175592
Autor:
Ali M. Niknejad, Angada B. Sachid, Yogesh Singh Chauhan, M. A. Karim, Sourabh Khandelwal, S. Venugopalan, Chenming Calvin Hu
Publikováno v:
2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).
We present an efficient approach to model the effects of vertical non-uniform doping in bulk MOSFETs. The impact of vertical non-uniform doping on device characteristics is analyzed through systematic TCAD simulations. The qualitative nature of the o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2022402e5d60ec1c580995d7bfa21f1
https://doi.org/10.1109/iccdcs.2012.6188935
https://doi.org/10.1109/iccdcs.2012.6188935
Publikováno v:
Nonvolatile Memory Technologies with Emphasis on Flash
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b76a1b8019f5fc330f4dae5235fcdf2
https://doi.org/10.1002/9780470181355.ch11
https://doi.org/10.1002/9780470181355.ch11
Autor:
Faiz Aizad Fatah, Yueh-Chin Lin, Ren-Xuan Liu, Kai-Chun Yang, Tai-We Lin, Heng-Tung Hsu, Jung-Hsiang Yang, Yasuyuki Miyamoto, Hiroshi Iwai, Chenming Calvin Hu, Sayeef Salahuddin, Edward Yi Chang
Publikováno v:
Applied Physics Express; Feb2016, Vol. 9 Issue 2, p1-1, 1p