Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Chengzhai, Lv"'
Publikováno v:
Materials Futures, Vol 2, Iss 3, p 032301 (2023)
Neuromorphic systems represent a promising avenue for the development of the next generation of artificial intelligence hardware. Machine vision, one of the cores in artificial intelligence, requires system-level support with low power consumption, l
Externí odkaz:
https://doaj.org/article/5b228e3f472242d986d5abc90e34b2e5
Autor:
Lei Zhang, Wenjie Yan, Han-Chun Wu, Yanhui Chen, Zhaotan Jiang, K.-M. Hung, Zhi Wang, Duan Zhang, Chengzhai Lv, Cormac Ó Coileáin, Ching-Ray Chang
Publikováno v:
ACS Applied Materials & Interfaces. 12:26746-26754
Layered materials are highly attractive in gas sensor research due to their extraordinary electronic and physicochemical properties. The development of cheaper and faster room-temperature detectors...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d682a8d4ffc267a3a6c49f1322648e2
https://doi.org/10.1021/acsami.0c07193
https://doi.org/10.1021/acsami.0c07193
Autor:
Yanhui Lv, Tung-Ho Shieh, K.-M. Hung, Duan Zhang, Yue Zhao, Gang Wu, Yanfeng Zhao, Hung Hsiang Cheng, Wenjie Yan, Chengzhai Lv, Yanhui Chen, Han-Chun Wu, Cormac Ó Coileáin, Ching-Ray Chang, Sunil K. Arora
Publikováno v:
ACS Applied Materials & Interfaces. 12:15830-15836
Field-effect transistors derived from traditional 3D semiconductors are rapidly approaching their fundamental limits. Layered semiconducting materials have emerged as promising candidates to replac...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf7c92c1be0da51cc41abb1a31e14fd1
https://doi.org/10.1021/acsami.9b21996
https://doi.org/10.1021/acsami.9b21996
Autor:
Chengzhai Lv, Jiung Cho, Wenjie Yan, Miri Choi, Tanja Stimpel-Lindner, Cormac Ó Coileáin, Jian Leng, Han-Chun Wu, Yanfeng Zhao, Juncheng Li, Conor P. Cullen, Georg S. Duesberg, Duan Zhang, Sunil K. Arora, Yanhui Lv, Byong Sun Chun
Publikováno v:
RSC Advances. 10:1580-1587
Monolayer MoSe2 is a transition metal dichalcogenide with a narrow bandgap, high optical absorbance and large spin-splitting energy, giving it great promise for applications in the field of optoelectronics. Producing monolayer MoSe2 films in a reliab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b55665aaff7fd0d196559f7ffce6fbb
https://doi.org/10.1039/c9ra09103c
https://doi.org/10.1039/c9ra09103c
Autor:
Wei-Ying Cheng, Wei-Chen Chien, Chengzhai Lv, Huei-Ru Fuh, Gang Wu, Yanhui Chen, Haifeng Fei, Hongjun Xu, Wenjie Yan, Han-Chun Wu, C. L. Heng, Yanfeng Zhao, Cormac Ó Coileáin, Ching-Ray Chang, Duan Zhang, Óscar Leonardo Camargo Moreira, Sunil K. Arora, Yanhui Lv
Publikováno v:
ACS Sensors. 4:2546-2552
SnSe2 is an anisotropic binary-layered material with rich physics, which could see it used for a variety of potential applications. Here, we investigate the gas-sensing properties of SnSe2 using first-principles calculations and verify predictions us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e692443823cef63aa761b22582c8c59c
https://doi.org/10.1021/acssensors.9b01461
https://doi.org/10.1021/acssensors.9b01461
Autor:
Chengzhai, Lv, Wenjie, Yan, Tung-Ho, Shieh, Yue, Zhao, Gang, Wu, Yanfeng, Zhao, Yanhui, Lv, Duan, Zhang, Yanhui, Chen, Sunil K, Arora, Cormac, Ó Coileáin, Ching-Ray, Chang, Hung Hsiang, Cheng, Kuan-Ming, Hung, Han-Chun, Wu
Publikováno v:
ACS applied materialsinterfaces. 12(13)
Field-effect transistors derived from traditional 3D semiconductors are rapidly approaching their fundamental limits. Layered semiconducting materials have emerged as promising candidates to replace restrictive 3D semiconductor materials. However, co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::38f9f189091652fc6ea21069862808ac
https://pubmed.ncbi.nlm.nih.gov/32134622
https://pubmed.ncbi.nlm.nih.gov/32134622
Autor:
Juncheng, Li, Wenjie, Yan, Yanhui, Lv, Jian, Leng, Duan, Zhang, Cormac, Ó Coileáin, Conor P, Cullen, Tanja, Stimpel-Lindner, Georg S, Duesberg, Jiung, Cho, Miri, Choi, Byong Sun, Chun, Yanfeng, Zhao, Chengzhai, Lv, Sunil K, Arora, Han-Chun, Wu
Publikováno v:
RSC advances. 10(3)
Monolayer MoSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::dc1057a2fd0fec51da41486b82cd433e
https://pubmed.ncbi.nlm.nih.gov/35494696
https://pubmed.ncbi.nlm.nih.gov/35494696
Autor:
Óscar Leonardo, Camargo Moreira, Wei-Ying, Cheng, Huei-Ru, Fuh, Wei-Chen, Chien, Wenjie, Yan, Haifeng, Fei, Hongjun, Xu, Duan, Zhang, Yanhui, Chen, Yanfeng, Zhao, Yanhui, Lv, Gang, Wu, Chengzhai, Lv, Sunil K, Arora, Cormac, Ó Coileáin, Chenglin, Heng, Ching-Ray, Chang, Han-Chun, Wu
Publikováno v:
ACS sensors. 4(9)
SnSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0beacbe318fda2bbd2cfc73e0ea8ef5a
https://pubmed.ncbi.nlm.nih.gov/31456397
https://pubmed.ncbi.nlm.nih.gov/31456397
Autor:
Camargo Moreira, Óscar Leonardo, Wei-Ying Cheng, Huei-Ru Fuh, Wei-Chen Chien, Wenjie Yan, Haifeng Fei, Hongjun Xu, Duan Zhang, Yanhui Chen, Yanfeng Zhao, Yanhui Lv, Gang Wu, Chengzhai Lv, Arora, Sunil K., Ó Coileáin, Cormac, Heng, Chenglin, Chang, Ching-Ray, Han-Chun Wu
Publikováno v:
ACS Sensors; 9/27/2019, Vol. 4 Issue 9, p2546-2552, 7p