Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Chengyun Hong"'
Autor:
Chengyun Hong, Saejin Oh, Vu Khac Dat, Sangyeon Pak, SeungNam Cha, Kyung-Hun Ko, Gyung-Min Choi, Tony Low, Sang-Hyun Oh, Ji-Hee Kim
Publikováno v:
Light: Science & Applications, Vol 12, Iss 1, Pp 1-11 (2023)
Abstract Transition metal dichalcogenide (TMD) layered semiconductors possess immense potential in the design of photonic, electronic, optoelectronic, and sensor devices. However, the sub-bandgap light absorption of TMD in the range from near-infrare
Externí odkaz:
https://doaj.org/article/78270a1f577a424f9340bce4e69e3782
Autor:
Vu Khac Dat, Chengyun Hong, Minh Dao Tran, Tuan Khanh Chau, Van Dam Do, Trang Thu Tran, Minh Chien Nguyen, Hai Phuong Duong, Saejin Oh, Woo Jong Yu, Jeongyong Kim, Ji‐Hee Kim
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 1, Pp n/a-n/a (2024)
Abstract Multispectral photodetectors are crucial for detecting light across a wide wavelength range, serving applications requiring precise wavelength specificity and spectral imaging capabilities. However, the development of these photodetectors is
Externí odkaz:
https://doaj.org/article/1145791b331b48cc8e845dfc69149b92
Autor:
Dinh Phuc Do, Chengyun Hong, Viet Q Bui, Thi Hue Pham, Sohyeon Seo, Van Dam Do, Thanh Luan Phan, Kim My Tran, Surajit Haldar, Byung‐wook Ahn, Seong Chu Lim, Woo Jong Yu, Seong‐Gon Kim, Ji‐Hee Kim, Hyoyoung Lee
Publikováno v:
Advanced Science, Vol 10, Iss 25, Pp n/a-n/a (2023)
Abstract Graphdiyne (GDY), a new 2D material, has recently proven excellent performance in photodetector applications due to its direct bandgap and high mobility. Different from the zero‐gap of graphene, these preeminent properties made GDY emerge
Externí odkaz:
https://doaj.org/article/c48803bec5ff47c3a6e629ebe7c3db7d
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 13, Pp n/a-n/a (2023)
Abstract Hot electron photodetection provides a powerful platform for photosensing beyond the bandgap of a semiconductor. High‐performing hot electron photodetection has been reported in 2D transition metal dichalcogenide material‐based devices w
Externí odkaz:
https://doaj.org/article/1a328b26ca684624b28c424ee29248a6
Autor:
Soyeong Kwon, Dong Yeun Jeong, Chengyun Hong, Saejin Oh, Jungeun Song, Soo Ho Choi, Ki Kang Kim, Seokhyun Yoon, Taeyoung Choi, Ki‐Ju Yee, Ji‐Hee Kim, Youngmin You, Dong‐Wook Kim
Publikováno v:
Advanced Science, Vol 9, Iss 23, Pp n/a-n/a (2022)
Abstract Integration of distinct materials to form heterostructures enables the proposal of new functional devices based on emergent physical phenomena beyond the properties of the constituent materials. The optical responses and electrical transport
Externí odkaz:
https://doaj.org/article/d61b37851b6d4976bdf8701ba5f56ccf
Publikováno v:
Advanced Materials Interfaces. 10
Transition metal dichalcogenide (TMD) layered semiconductors possess immense potential in the design of photonic, electronic, optoelectronic, and sensor devices. However, sub-bandgap light absorption of TMD in the range from near-infrared (NIR) to sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ecda0fe5536f735879ba90754439d68
https://doi.org/10.21203/rs.3.rs-2473101/v1
https://doi.org/10.21203/rs.3.rs-2473101/v1
Autor:
Soyeong Kwon, Dong Yeun Jeong, Chengyun Hong, Saejin Oh, Jungeun Song, Soo Ho Choi, Ki Kang Kim, Seokhyun Yoon, Taeyoung Choi, Ki‐Ju Yee, Ji‐Hee Kim, Youngmin You, Dong‐Wook Kim
Publikováno v:
Advanced Science. 9
Autor:
Minhao Zhang, Anmin Nie, Yingchun Cheng, Junquan Huang, Yongqing Huang, Nan Wang, Chengyun Hong, Xiaolong Liu, Ruiping Li, Ye Tao, Xiaomin Ren
Publikováno v:
ACS Nano. 14:16803-16812
As an emerging ultrathin semiconductor material, Bi2O2Se exhibits prominent performances in electronics, optoelectronics, ultrafast optics, etc. However, until now, the in-plane growth of Bi2O2Se thin films is mostly fulfilled on atomically flat mica
Autor:
Lan-Anh T, Nguyen, Krishna P, Dhakal, Yuhan, Lee, Wooseon, Choi, Tuan Dung, Nguyen, Chengyun, Hong, Dinh Hoa, Luong, Young-Min, Kim, Jeongyong, Kim, Myeongwon, Lee, Taeyoung, Choi, Andreas J, Heinrich, Ji-Hee, Kim, Donghun, Lee, Dinh Loc, Duong, Young Hee, Lee
Publikováno v:
ACS nano. 15(12)
While valley polarization with strong Zeeman splitting is the most prominent characteristic of two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors under magnetic fields, enhancement of the Zeeman splitting has been demonstrated