High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization

Autor: E. Engbrecht, Edward P. Maciejewski, Christopher D. Sheraw, R. Divakaruni, Zhengwen Li, Allen H. Gabor, L. Economikos, Fernando Guarin, N. Zhan, H-K Lee, MaryJane Brodsky, Kenneth J. Stein, Siyuranga O. Koswatta, Y. Yang, Byeong Y. Kim, J. Hong, A. Bryant, Herbert L. Ho, Ruqiang Bao, Nicolas Breil, Babar A. Khan, E. Woodard, W-H. Lee, C-H. Lin, A. Levesque, Kevin McStay, V. Basker, Viraj Y. Sardesai, C. Tran, A. Ogino, Reinaldo A. Vega, C. DeWan, Shreesh Narasimha, J-J. An, Amit Kumar, A. Aiyar, Ravikumar Ramachandran, W. Wang, X. Wang, W. Nicoll, D. Hoyos, A. Friedman, Barry Linder, Yongan Xu, E. Alptekin, Cathryn Christiansen, S. Polvino, Han Wang, Scott R. Stiffler, G. Northrop, S. Saudari, J. Rice, Saraf Iqbal Rashid, Sunfei Fang, Michael V. Aquilino, Z. Ren, B. Kannan, Geng Wang, Noah Zamdmer, T. Kwon, Paul D. Agnello, Hasan M. Nayfeh, S. Jain, Robert R. Robison, M. Hasanuzzaman, J. Cai, L. Lanzerotti, D. Wehelle-Gamage, Basanth Jagannathan, J. Johnson, E. Kaste, Kai Zhao, Huiling Shang, Carl J. Radens, Shariq Siddiqui, Y. Ke, D. Ferrer, Ximeng Guan, D. Conklin, K. Boyd, K. Henson, Siddarth A. Krishnan, Bernard A. Engel, H. Dong, S. Mahajan, Unoh Kwon, Dominic J. Schepis, William Y. Chang, Liyang Song, Brian J. Greene, Chengwen Pei, S.-J. Jeng, Clevenger Leigh Anne H, Vijay Narayanan, C. Zhu, Wai-kin Li, Henry K. Utomo, Wei Liu, Dureseti Chidambarrao

Publikováno v: 2014 IEEE International Electron Devices Meeting.

We present a fully integrated 14nm CMOS technology featuring finFET architecture on an SOI substrate for a diverse set of SoC applications including HP server microprocessors and LP ASICs. This SOI finFET architecture is integrated with a 4th generat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6233530b0b3fd6ddc14276a018716523
https://doi.org/10.1109/iedm.2014.7046977

1.55 μm reflection-type optical waveguide switch based on SiGe/Si plasma dispersion effect

Autor: Baojun Li, Chengwen Pei, Enke Liu, Guozheng Li, Zuimin Jiang, Xun Wang

Publikováno v: Applied Physics Letters. 75:1-3

Based on total internal reflection and plasma dispersion effect, a SiGe/Si asymmetric optical waveguide switch with transverse injection structure has been proposed and fabricated. The switch performance is measured at the wavelength of 1.55 μm. A m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4c3b64b15c6f686f3025351e1a870af5
https://doi.org/10.1063/1.124635

A 0.127 μm2 High Performance 65nm SOI Based embedded DRAM for on-Processor Applications

Autor: S.S. Iyer, Kevin R. Winstel, C. Tanner, Lisa Y. Danbury Ninomiya, J. Faltermeier, T. Kirihata, Hyun-Chul Kim, Chengwen Pei, Xiaolin Li, Herbert L. Ho, Munir-ud-Din Naeem, D. Casarotto, David M. Dobuzinsky, P. Marchetti, K. Balasubramanyam, R. Deschner, R. Zhang, John Benedict, Paul C. Parries, MaryJane Brodsky, W. Kong, Babar A. Khan, Kangguo Cheng, A. Kniffm, Y. Feng, J. Barth, C. Norris, J. Yates, James P. Norum, D. Parise, J. Cai, Kevin McStay, Scott D. Allen, Geng Wang

Publikováno v: 2006 International Electron Devices Meeting.

The authors present a 65nm embedded DRAM cell (0.127 μm2 cell size) on unpatterned SOI fabricated using standard high performance SOI technology with dual stress liner (DSL). The cell utilizes a low-leakage 2.2-nm gate oxide pass transistor and a de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b20402da01571722a896dde3c7f62e90
https://doi.org/10.1109/iedm.2006.346845

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Publikováno v: Fairfield County Business Journal. 8/13/2012, Vol. 48 Issue 33, p23-30. 8p.