Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Chengsen Wang"'
Autor:
Hao Yuan, Chengsen Wang, Xiaoyan Tang, Qingwen Song, Yanjing He, Yimen Zhang, Yuming Zhang, Li Xiao, Liangyong Wang, Yong Wu
Publikováno v:
IEEE Access, Vol 8, Pp 93039-93047 (2020)
This paper reports the demonstration of a high performance 4H-SiC floating junction junction barrier Schottky (FJ_JBS) rectifier with a 30μm, 6×1015 cm-3-doped epitaxial layer. Extensive simulations have been performed to design, optimize and analy
Externí odkaz:
https://doaj.org/article/c1b684f17247422581f04327f7ec6d23
Publikováno v:
Folia Microbiologica. 67:913-921
Antibiotic-resistant pathogens pose high risks to human and animal health worldwide. In recent years, many studies have been carried out to investigate the role of gut microbiota as a pool of antibiotic resistance genes (ARGs) in human and animals. B
Autor:
Guosong Lv, Jing Wang, Xingyu Wang, Chengsen Wang, Xinxin Chen, Jiankun Li, Dewei Chen, Bo wu, LianYuan Li, Wei Yu
Publikováno v:
2022 IEEE 8th International Conference on Computer and Communications (ICCC).
Autor:
Xinxin Chen, Jing Wang, Xingyu Wang, Chengsen Wang, Guosong Lv, Jiankun Li, Dewei Chen, Bo Wu, LianYuan Li, Wei Yu
Publikováno v:
2022 18th International Conference on Mobility, Sensing and Networking (MSN).
Autor:
Chengsen Wang, Yuan Hao, He Yanjing, Yuming Zhang, Liangyong Wang, Li Xiao, Yimen Zhang, Qingwen Song, Tang Xiaoyan, Wu Yong
Publikováno v:
IEEE Access, Vol 8, Pp 93039-93047 (2020)
This paper reports the demonstration of a high performance 4H-SiC floating junction junction barrier Schottky (FJ_JBS) rectifier with a 30μm, 6×1015 cm-3-doped epitaxial layer. Extensive simulations have been performed to design, optimize and analy
Publikováno v:
Smart Construction Research. 2
With the development of the times, people's economic level is improving, the urban construction is accelerated, the road, bridge and tunnel construction as the focus of the urban construction scale of construction projects and the construction quanti
Autor:
Xiaoyan Tang, Chengsen Wang, Yuan Hao, Yidong Shen, Yimen Zhang, Qingwen Song, Yuming Zhang, Renxu Jia
Publikováno v:
ASICON
A 4H-SiC Junction Barrier Schottky Diodes(JBSs) based on 30μm, 3∗1015cm−3 epitaxial structures was fabricated by using metal Ti as the Schottky metal. The Non-linearly limit field rings (NL-FLRs) is used as termination for protecting the anode e