Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Chengning Wang"'
Publikováno v:
IEEE Access, Vol 9, Pp 167173-167189 (2021)
Resistive Random Access Memory (ReRAM) is promising to be employed as high density storage-class memory due to its crossbar array and Triple-Level Cell (TLC) structures. However, TLC crossbar ReRAM suffers from high write latency and energy due to th
Externí odkaz:
https://doaj.org/article/aafb38c7ff7c48889d93bc27c0dcdd5d
Autor:
Andrea S Gershon, Chengning Wang, Jun Guan, Jovanka Vasilevska-Ristovska, Lisa Cicutto, Teresa To
Publikováno v:
Canadian Respiratory Journal, Vol 16, Iss 6, Pp 183-188 (2009)
BACKGROUND: Asthma imposes a heavy and expensive burden on individuals and populations. A population-based surveillance and research program based on health administrative data could measure and study the burden of asthma; however, the validity of a
Externí odkaz:
https://doaj.org/article/a495da740b23476fb592f243110d8be2
Publikováno v:
PLoS ONE, Vol 8, Iss 1 (2013)
Externí odkaz:
https://doaj.org/article/0310ef463c8d4159abb3d05f645279b0
Publikováno v:
PLoS ONE, Vol 7, Iss 5, p e34967 (2012)
BACKGROUND: Asthma comorbidity has been correlated with poor asthma control, increased health services use, and decreased quality of life. Managing it improves these outcomes. Little is known about the amount of different types of comorbidity associa
Externí odkaz:
https://doaj.org/article/3986434832114b92ac1f93746a045142
Autor:
Wei Zhao, Jie Xu, Xueliang Wei, Bing Wu, Chengning Wang, Weilin Zhu, Wei Tong, Dan Feng, Jingning Liu
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 42:122-135
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8f081e4acab44b6bdc7afcc54d52223
https://doi.org/10.1109/tcad.2022.3169458
https://doi.org/10.1109/tcad.2022.3169458
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 41:3479-3491
Three-dimensional (3D) integrated cross-point memory arrays can be used to build high-density storage-class memory systems. However, the coupled network topology caused by sharing word-lines or bit-lines between adjacent memory layers significantly e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9692ff84351a28b99b9ee4e7bdf54a81
https://doi.org/10.1109/tcad.2021.3123591
https://doi.org/10.1109/tcad.2021.3123591
Autor:
Yu Hua, Wei Tong, Wei Zhao, Jingning Liu, Yi Chen, Linghao Song, Yang Zhang, Chengning Wang, Jie Xu, Bing Wu, Wei Xueliang, Dan Feng
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 40:762-775
Resistive memory is promising to be constructed as a high-density storage-class memory. Multilevel cell, access-transistor-free cross-point array structure, and 3-D array integration are three approaches to scale up the density of resistive memory. H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb2c5bf2dfaa92b5a3c62088983ac818
https://doi.org/10.1109/tcad.2020.3006188
https://doi.org/10.1109/tcad.2020.3006188
Publikováno v:
IEEE Access, Vol 9, Pp 167173-167189 (2021)
Resistive Random Access Memory (ReRAM) is promising to be employed as high density storage-class memory due to its crossbar array and Triple-Level Cell (TLC) structures. However, TLC crossbar ReRAM suffers from high write latency and energy due to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b05cbd272e4ff3d5c544005c3f235510
https://doi.org/10.1109/access.2021.3129878
https://doi.org/10.1109/access.2021.3129878
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 39:1806-1819
Memristive crossbar array suffers from severe sneak currents that incur reliability issues and extra energy waste. Complementary resistive switches (CRSs) provide a new concept to address the sneak-current problem. But the destructive read of CRS res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8da4305a770382eb8b24b84943d0a0c5
https://doi.org/10.1109/tcad.2019.2927520
https://doi.org/10.1109/tcad.2019.2927520
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd38c24716d1f18364eb81ccaf4c5cd3
https://doi.org/10.1109/tcad.2023.3267713
https://doi.org/10.1109/tcad.2023.3267713