Zobrazeno 1 - 10
of 88
pro vyhledávání: '"Chengning Wang"'
Publikováno v:
IEEE Access, Vol 9, Pp 167173-167189 (2021)
Resistive Random Access Memory (ReRAM) is promising to be employed as high density storage-class memory due to its crossbar array and Triple-Level Cell (TLC) structures. However, TLC crossbar ReRAM suffers from high write latency and energy due to th
Externí odkaz:
https://doaj.org/article/aafb38c7ff7c48889d93bc27c0dcdd5d
Autor:
Wei Zhao, Jie Xu, Xueliang Wei, Bing Wu, Chengning Wang, Weilin Zhu, Wei Tong, Dan Feng, Jingning Liu
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 42:122-135
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8f081e4acab44b6bdc7afcc54d52223
https://doi.org/10.1109/tcad.2022.3169458
https://doi.org/10.1109/tcad.2022.3169458
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 41:3479-3491
Three-dimensional (3D) integrated cross-point memory arrays can be used to build high-density storage-class memory systems. However, the coupled network topology caused by sharing word-lines or bit-lines between adjacent memory layers significantly e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9692ff84351a28b99b9ee4e7bdf54a81
https://doi.org/10.1109/tcad.2021.3123591
https://doi.org/10.1109/tcad.2021.3123591
Autor:
Yu Hua, Wei Tong, Wei Zhao, Jingning Liu, Yi Chen, Linghao Song, Yang Zhang, Chengning Wang, Jie Xu, Bing Wu, Wei Xueliang, Dan Feng
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 40:762-775
Resistive memory is promising to be constructed as a high-density storage-class memory. Multilevel cell, access-transistor-free cross-point array structure, and 3-D array integration are three approaches to scale up the density of resistive memory. H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb2c5bf2dfaa92b5a3c62088983ac818
https://doi.org/10.1109/tcad.2020.3006188
https://doi.org/10.1109/tcad.2020.3006188
Publikováno v:
IEEE Access, Vol 9, Pp 167173-167189 (2021)
Resistive Random Access Memory (ReRAM) is promising to be employed as high density storage-class memory due to its crossbar array and Triple-Level Cell (TLC) structures. However, TLC crossbar ReRAM suffers from high write latency and energy due to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b05cbd272e4ff3d5c544005c3f235510
https://doi.org/10.1109/access.2021.3129878
https://doi.org/10.1109/access.2021.3129878
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 39:1806-1819
Memristive crossbar array suffers from severe sneak currents that incur reliability issues and extra energy waste. Complementary resistive switches (CRSs) provide a new concept to address the sneak-current problem. But the destructive read of CRS res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8da4305a770382eb8b24b84943d0a0c5
https://doi.org/10.1109/tcad.2019.2927520
https://doi.org/10.1109/tcad.2019.2927520
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd38c24716d1f18364eb81ccaf4c5cd3
https://doi.org/10.1109/tcad.2023.3267713
https://doi.org/10.1109/tcad.2023.3267713
Autor:
Andrea S Gershon, Chengning Wang, Jun Guan, Jovanka Vasilevska-Ristovska, Lisa Cicutto, Teresa To
Publikováno v:
Canadian Respiratory Journal, Vol 16, Iss 6, Pp 183-188 (2009)
BACKGROUND: Asthma imposes a heavy and expensive burden on individuals and populations. A population-based surveillance and research program based on health administrative data could measure and study the burden of asthma; however, the validity of a
Externí odkaz:
https://doaj.org/article/a495da740b23476fb592f243110d8be2
Publikováno v:
IEEE Transactions on Electron Devices. 66:5347-5352
Multilevel cell cross-point memory arrays can be used to architect high-density resistive memory. However, coupled sneak current and IR drop cause cell-to-cell nonuniformity of multilevel readout current in cross-point memory arrays during read opera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c8fdb05d02cf3b752b73ffae3c7b659
https://doi.org/10.1109/ted.2019.2945058
https://doi.org/10.1109/ted.2019.2945058
Autor:
Zheng Li, Jingning Liu, Wei Tong, Dan Feng, Wei Zhao, Yang Zhang, Chengning Wang, Jiayi Chang, Jie Xu, Bing Wu, Ruoxi Ren, Li Yilin
Publikováno v:
ACM Transactions on Design Automation of Electronic Systems. 24:1-37
Emerging computational resistive memory is promising to overcome the challenges of scalability and energy efficiency that DRAM faces and also break through the memory wall bottleneck. However, cell-level and array-level nonideal properties of resisti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32b0d28db933f1ee2fea49a54d6f9578
https://doi.org/10.1145/3325067
https://doi.org/10.1145/3325067