Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

Autor: Chengjun Shen, Saeed Jahdi, Juefei Yang, Olayiwola Alatise, Jose Ortiz-Gonzalez, Ruizhu Wu, Phil Mellor

Publikováno v: IEEE Open Journal of the Industrial Electronics Society, Vol 3, Pp 65-80 (2022)

The 4H-SiC vertical NPN BJTs are attractive power devices with potentials to be used as high power switching devices with high voltage ratings in range of 1.7 kV and high operating temperatures. In this paper, the advantages of the 4H-SiC NPN BJTs in

Externí odkaz: https://doaj.org/article/a5c5fff66eea4081a9f674b73f2a6ffa

Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

Autor: Renze Yu, Saeed Jahdi, Phil Mellor, Juefei Yang, Chengjun Shen, Li Liu, Olayiwola Alatise, Jose Ortiz-Gonzalez

Publikováno v: Yu, R, Jahdi, S, Mellor, P H, Yang, J, Shen, C, Liu, L, Alatise, O & Ortiz-Gonzalez, J 2022, Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs . in 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) . Institute of Electrical and Electronics Engineers (IEEE), Coventry, United Kingdom, 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 18/09/22 . https://doi.org/10.1109/WiPDAEurope55971.2022.9936284

In this paper, the reliability of planar, symmetrical, and asymmetrical SiC MOSFET is compared under repetitive short circuit shocks. Both static and dynamic parameters are tested after certain cycles to investigate the degradation pattern of the dev

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6aa856df8ff3260d29e6e5d6eae44ebe
https://research-information.bris.ac.uk/ws/files/345994574/2022157255.pdf

Investigation of the Static Performance and Avalanche Reliability of High Voltage 4H-SiC Merged-PiN-Schottky Diodes

Autor: Chengjun Shen, Saeed Jahdi, Mellor, Phil H., Juefei Yang, Erfan Bashar, Jose Ortiz-Gonzalez, Olayiwola Alatise

Publikováno v: Shen, C, Jahdi, S, Mellor, P H, Yang, J, Bashar, E, Ortiz-Gonzalez, J & Alatise, O 2022, Investigation of the Static Performance and Avalanche Reliability of High Voltage 4H-SiC Merged-PiN-Schottky Diodes . in 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) . Institute of Electrical and Electronics Engineers (IEEE), Hanover, Germany, 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), Hanover, Germany, 5/09/22 . < https://ieeexplore.ieee.org/document/9907751 >
University of Bristol-PURE

A comprehensive range of static measurements and UIS tests have been conducted for Silicon PiN diodes, SiC JBS diodes and SiC MPS diodes with temperatures ranging to up to 175°C. The results shows that the forward voltage of Silicon PiN diode is low

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::71195b39e8b915ae8057bc1f59711be7
https://ieeexplore.ieee.org/document/9907751

Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress

Autor: Chengjun Shen, Saeed Jahdi, Juefei Yang, Olayiwola Alatise, Jose Ortiz-Gonzalez, Phil Mellor

Publikováno v: Shen, C, Jahdi, S, Yang, J, Alatise, O, Ortiz-Gonzalez, J & Mellor, P H 2022, Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress . in 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022 . 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022, Institute of Electrical and Electronics Engineers (IEEE), Detroit, MI, USA, 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 9/10/22 . https://doi.org/10.1109/ECCE50734.2022.9948045

A comprehensive range of surge current measurements and UIS tests have been conducted for Silicon PiN diodes, SiC JBS diodes and SiC MPS diodes with temperatures ranging to up to 175°C. The results show that the SiC devices outperform the Silicon de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e3641e45d6b5eb64d43ae29129c28c7
https://doi.org/10.1109/ecce50734.2022.9948045

Low temperature synthesis and dielectric characterisation of La2Mo2O9 ceramic at RF and microwave frequencies

Autor: Chunchun Li, Zhuo Xing, Chengjun Shen, Changzhi Yin, Hongjun Ye

Publikováno v: Advances in Applied Ceramics. 119:387-392

Using a simple solid-state mixed oxides method, dense La2Mo2O9 ceramics with a relative density higher than 94% were prepared at relatively low sintering temperatures (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2f3b25edb4bcdffa2054854fa7b19ee0
https://doi.org/10.1080/17436753.2020.1774220