Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Cheng-yi Peng"'
Publikováno v:
Frontiers in Pharmacology, Vol 11 (2020)
Cancer has become a significant public health problem with high disease burden and mortality. At present, radiotherapy and chemotherapy are the main means of treating cancer, but they have shown serious safety problems. The severity of this problem h
Externí odkaz:
https://doaj.org/article/95b92afbe836492e86dba1ed1581d5fd
Autor:
Jia, Guang-Sheng, Feng, Guang-Long, Li, Jin-Ping, Xu, Hai-Long, Wang, Hui, Cheng, Yi-Peng, Yan, Lin-Lin, Jiang, Hui-Jie
Publikováno v:
In Hepatobiliary & Pancreatic Diseases International 15 June 2017 16(3):303-309
Akademický článek
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Publikováno v:
In Digital Signal Processing 2010 20(2):511-527
Publikováno v:
Natural Hazards. 64:273-282
Taiwan is a mountainous country, so there is an ever present danger of landslide disasters during the rainy seasons or typhoons. This study aims to develop a fuzzy-rule-based risk assessment model for debris flows and to verify the accuracy of risk a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d0a1e5d11f72dd1f9f5825833593a81
https://doi.org/10.1007/s11069-012-0236-z
https://doi.org/10.1007/s11069-012-0236-z
Publikováno v:
Natural Hazards. 60:1255-1266
This paper aims to develop a model for debris flow hazard assessment, since Taiwan is a mountainous country subject to bouts of heavy rainfall during the rainy and typhoon seasons and is thus frequently subject to landslide disasters. The database us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e1e587028ed53f519b5ec46ea1c554e
https://doi.org/10.1007/s11069-011-9907-4
https://doi.org/10.1007/s11069-011-9907-4
Publikováno v:
ECS Transactions. 27:1147-1151
Two possible side effects when evaluating the crystalline volume fraction of microcrystalline silicon films by Raman spectroscopy measurement have been investigated. Large laser power incident into the microcrystalline silicon film during measurement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8662d6369ec40232c47efa1085435e9d
https://doi.org/10.1149/1.3360764
https://doi.org/10.1149/1.3360764
Publikováno v:
IEEE Transactions on Electron Devices. 56:1736-1745
The flatband-voltage shift of metal-oxide-silicon capacitors is investigated under the application of low-level stress (up to 220 MPa of biaxial stress and 380 MPa of uniaxial stress) to different substrate orientations. We propose that the flatband-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4703f8d2c822677cbe92b02040dd410
https://doi.org/10.1109/ted.2009.2022693
https://doi.org/10.1109/ted.2009.2022693
Autor:
Ching-Fang Huang, Chee-Wee Liu, Chee-Zxaing Liu, P.-S. Kuo, Ying-Jhe Yang, Huan-Lin Chang, Hung-Chih Chang, Cheng-Yi Peng, Hung-Chang Sun
Publikováno v:
IEEE Electron Device Letters. 29:1332-1335
Positive bias temperature instability in p-channel polycrystalline silicon thin-film transistors is investigated. The stress-induced hump in the subthreshold region is observed and is attributed to the edge transistor along the channel width directio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16aa0dc5583e4450eabc6907ccf7b7ea
https://doi.org/10.1109/led.2008.2007306
https://doi.org/10.1109/led.2008.2007306
Publikováno v:
ECS Transactions. 16:249-253
Nickel germanides formed on crystalline n-Ge (110) substrate are investigated. By the XRD analysis, Ni5Ge3, NiGe, and Ni2Ge phases are formed sequentially with the increasing annealing temperatures from 300oC to 600oC on n-Ge (110) substrate. NiGe, h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99b99dffaa681f6f04901e49006be159
https://doi.org/10.1149/1.2986778
https://doi.org/10.1149/1.2986778