Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Cheng-long YAN"'
Publikováno v:
气体物理, Vol 8, Iss 1, Pp 79-88 (2023)
The excellent atomization of the fuel in the air-breathing rotating detonation engine is extremely important to the detonation combustion. The gas-liquid combined transverse jet is one of the vital fuel injection technologies. Numerical methods were
Externí odkaz:
https://doaj.org/article/23f3fd45d7df46dbaa1b2ad1862652e7
Akademický článek
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Publikováno v:
PeerJ, Vol 8, p e8474 (2020)
Background Quantitativereal-time reverse transcriptase polymerase chain reaction is the common method to quantify relative gene expression. Normalizating using reliable genes is critical in correctly interpreting expression data from qRT-PCR. Euscaph
Externí odkaz:
https://doaj.org/article/0b1909362959469d81dfeb1c3e137b9f
Autor:
Cheng-Long Yang, Yi-Shuang Wang, Cheng-Li Liu, Ying-Jie Zeng, Ping Cheng, Rui-Hua Jiao, Shi-Xiang Bao, Hui-Qin Huang, Ren-Xiang Tan, Hui-Ming Ge
Publikováno v:
Marine Drugs, Vol 15, Iss 8, p 244 (2017)
Two new alkaloids, strepchazolins A (1) and B (2), together with a previously reported compound, streptazolin (3), were isolated from a marine actinomycete, Streptomyces chartreusis NA02069, collected in the Coast of Hainan Island, China. The structu
Externí odkaz:
https://doaj.org/article/45ccc2b42a7e4a909a00d13a9a35a47f
Publikováno v:
Acta Crystallographica Section E, Vol 65, Iss 7, Pp o1707-o1707 (2009)
In the title compound, C16H14N4O, there are intermolecular N—H...N hydrogen bonds which may be effective in stabilizing the crystal. The title compound is an important medicament and is used in the synthesis of antitumour drugs.
Externí odkaz:
https://doaj.org/article/ea0fe248e5444f9d882137fbf0a9a990
Autor:
Cheng-Long Yang, 楊政龍
102
In this thesis, the conventional schottky gate, surface passivated and metal-oxide-semiconductor AlGaN/GaN heterostructure field-fffect transistors (HFETs) were studied by using ultrasonic spray pyrolysis deposition technique are presented.
In this thesis, the conventional schottky gate, surface passivated and metal-oxide-semiconductor AlGaN/GaN heterostructure field-fffect transistors (HFETs) were studied by using ultrasonic spray pyrolysis deposition technique are presented.
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/43968027526809915775
