Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Cheng-jyun Wang"'
Publikováno v:
Nanomaterials, Vol 10, Iss 3, p 458 (2020)
Direct ink-jet printing of a zinc-oxide-based thin-film transistor (ZnO-based TFT) with a three-dimensional (3-D) channel structure was demonstrated for ultraviolet light (UV) and visible light photodetection. Here, we demonstrated the channel struct
Externí odkaz:
https://doaj.org/article/a0fbceabf7c542d992f15c0611f1f84b
Autor:
Cheng-jyun Wang, 王呈鈞
99
Recently, the Executive Yuan in the 20 October 2008 approved the program to promote the smoothness road, so that government agencies actively promoting smoothness road and underground manhole plans. Significantly increase the domestic traffic
Recently, the Executive Yuan in the 20 October 2008 approved the program to promote the smoothness road, so that government agencies actively promoting smoothness road and underground manhole plans. Significantly increase the domestic traffic
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/15959414127592263054
Autor:
Hsin-Chiang You1 hcyou@ncut.edu.tw, Cheng-Jyun Wang1 eddie415004@gmail.com
Publikováno v:
Materials (1996-1944). Mar2017, Vol. 10 Issue 3, p234. 6p. 1 Diagram, 1 Chart, 2 Graphs.
Publikováno v:
Microelectronic Engineering. 177:87-92
This study examined the use of a simple sol-gel method for synthesizing indium zinc oxide (IZO) films for use as semiconductor channel layers in thin-film transistors (TFTs) fabricated on flexible polyimide substrates. The performance of the flexible
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba5a4cb2268571ef79754661db4fd668
https://doi.org/10.1016/j.mee.2017.02.024
https://doi.org/10.1016/j.mee.2017.02.024
Publikováno v:
Materials, Vol 12, Iss 21, p 3639 (2019)
Materials
Volume 12
Issue 21
Materials
Volume 12
Issue 21
Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5eeda45bc4027533099529234f65c46
https://www.mdpi.com/1996-1944/12/21/3639
https://www.mdpi.com/1996-1944/12/21/3639
Publikováno v:
Organic Electronics. 19:120-130
In this study, we have successfully explored the potential of a new bilayer gate dielectric material, composed of Polystyrene (PS), Pluronic P123 Block Copolymer Surfactant (P123) composite thin film and Polyacrylonitrile (PAN) through fabrication of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91c130724458357403e411a4e1608af8
https://doi.org/10.1016/j.orgel.2015.01.029
https://doi.org/10.1016/j.orgel.2015.01.029
Publikováno v:
2016 International Symposium on Computer, Consumer and Control (IS3C).
Ink-jet printed (IJP) thin-film transistor (TFT) electronics employing solution processed materials is considered to be the key technique to achieve mask-less, low-cost, large-area, and low temperature fabrication systems. We propose an approach for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5891ed824658b39eb1f66a965e91f478
https://doi.org/10.1109/is3c.2016.53
https://doi.org/10.1109/is3c.2016.53
Publikováno v:
2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
This study describes a simple and efficient method for depositing of highly ordered and aligned Zinc Oxide (ZnO) film as the semiconducting channel layer for use in a transparent thin-film transistor (TFT) on a silicon and flexible polyimide (PI) sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b91dca94986b71bc03c83e3f98ec75c2
https://doi.org/10.1109/am-fpd.2014.6867140
https://doi.org/10.1109/am-fpd.2014.6867140
Autor:
CHENG-JYUN, WANG, 王誠駿
102
This study describes a simple and efficient method for depositing of highly ordered and aligned Zinc Oxide (ZnO) film as the semiconducting channel layer for use in a transparent thin-film transistor (TFT) on a silicon and flexible polyimide
This study describes a simple and efficient method for depositing of highly ordered and aligned Zinc Oxide (ZnO) film as the semiconducting channel layer for use in a transparent thin-film transistor (TFT) on a silicon and flexible polyimide
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/99824986830437606445