Zobrazeno 1 - 10
of 123
pro vyhledávání: '"Cheng-jung Lee"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 518-524 (2018)
The use of a threshold-switching Ni/NbO2/Ni device with a memory-switching Pt/magnesium zirconate titanate/Al device on a flexible substrate was proposed to suppress undesired sneak currents. The proposed flexible one selector and one resistor (1S1R)
Externí odkaz:
https://doaj.org/article/c2e56cae4de34100a2165bd813f53905
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 321-327 (2016)
High-resistance state (HRS) current has significant effect on the reliability and power consumption of resistive switching memories. Low HRS current is helpful for obtaining ultra-low power and for high ON/OFF ratio nonvolatile memory application. Th
Externí odkaz:
https://doaj.org/article/2973074788e045099b4e2f1b187a8b54
Publikováno v:
Materials, Vol 10, Iss 12, p 1408 (2017)
A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The
Externí odkaz:
https://doaj.org/article/14f9298d7ec74bd99eaa6511f34d7703
Publikováno v:
Materials, Vol 11, Iss 1, p 32 (2017)
This study investigates the preparation and electrical properties of Al/cobalt-embedded gelatin (CoG)/ indium tin oxide (ITO) resistive switching memories. Co. elements can be uniformly distributed in gelatin without a conventional dispersion procedu
Externí odkaz:
https://doaj.org/article/191b9eda7f104328bf56d27cd23c35b5
Publikováno v:
IEEE Electron Device Letters. 40:236-239
Paper-basedpentacene organic thin-film transistors (OTFTs) with spin-coated gelatin (G) stacked gate dielectric layers, the Au/pentacene/G/G matrix-embedded iron (FeG)/Al/paper structure, were fabricated. The proposed composite-stacked bio-dielectric
Publikováno v:
Organic Electronics. 65:77-81
“Green’’ electronics represents an emerging area of research aimed at identifying natural materials that are applicable for environmentally safe and biodegradable devices. Iron (Fe) ions are used in gelatin matrixes (gelatin composites) prepare
Autor:
Cheng-Jung, Lee, Chen-June, Seak, Pin-Chieh, Liao, Chia-Hsun, Chang, I-Shiang, Tzen, Po-Jen, Hou, Chih-Chuan, Lin
Publikováno v:
J Acute Med
BACKGROUND: Epistaxis is the most common cause of otorhinolaryngologic emergencies. There is a longstanding controversy regarding the relationship between epistaxis and hypertension (HTN), in terms of blood pressure (BP) control in the emergency depa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid_dedup__::28fd357d9dbdf74f3c1a3cfaa12a01e3
https://europepmc.org/articles/PMC7517968/
https://europepmc.org/articles/PMC7517968/
Publikováno v:
Microelectronics Reliability. 83:281-285
A reduced high-resistance state (HRS) current assists in obtaining high ON/OFF ratio and is beneficial to operation flexibility. This study proposes that less difference in the atomic radius of alkaline earth oxide-based memory devices is beneficial
Publikováno v:
IEEE Transactions on Electron Devices. 65:680-686
High- $\kappa $ barium zirconate nickelate (BZN) gate dielectric layer was prepared through the low-temperature sol–gel method and was used in pentacene-based organic thin-film transistor (OTFT) applications. In comparison with its barium zirconate
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 518-524 (2018)
The use of a threshold-switching Ni/NbO2/Ni device with a memory-switching Pt/magnesium zirconate titanate/Al device on a flexible substrate was proposed to suppress undesired sneak currents. The proposed flexible one selector and one resistor (1S1R)