Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Cheng-Zu Wu"'
Autor:
Cheng-Zu Wu, 吳承儒
84
In this thesis, we will discuss two kinds of InGaAs-GaAs heterostructure graded doped-channel MIS-like FET. The main advantage of graded doped-channel MIS-like FET''s is li- kely doped-channel MIS-like FET''s(DMT''s). Comparing to DMT''s, it
In this thesis, we will discuss two kinds of InGaAs-GaAs heterostructure graded doped-channel MIS-like FET. The main advantage of graded doped-channel MIS-like FET''s is li- kely doped-channel MIS-like FET''s(DMT''s). Comparing to DMT''s, it
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/62054248820133553317
Publikováno v:
Communications in Theoretical Physics. 63:215-221
We investigate the p ! �K + � reaction near threshold within an effective Lagrangian approach and the isobar model. Various nucleon resonances caused by theandmeson exchanges and background contributions are considered. It is shown that the contr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6aa0f64189d1f58b7e26cd890577264
https://doi.org/10.1088/0253-6102/63/2/14
https://doi.org/10.1088/0253-6102/63/2/14
A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor
Autor:
Hung-Ming Chuang, Shiou-Ying Cheng, Cheng-Zu Wu, Chih-Kai Wang, Kun-Wei Lin, Kuo-Hui Yu, Chin-Chuan Cheng, Wen-Chau Liu, Jing-Yuh Chen
Publikováno v:
Semiconductor Science and Technology. 16:997-1001
A novel and high-performance Pd/oxide/GaAs hydrogen sensor based on a metal-insulator-semiconductor field-effect transistor (MISFET) is fabricated and studied. In the presence of the interfacial oxide, high sensitivity and significant increase in out
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e13ddf6d22169976bc1457e64ec5e19
https://doi.org/10.1088/0268-1242/16/12/309
https://doi.org/10.1088/0268-1242/16/12/309
Autor:
Kuo-Hui Yu, Chin-Chuan Cheng, Wen-Chau Liu, Kun-Wei Lin, Shiou-Ying Cheng, Jing-Yuh Chen, Cheng-Zu Wu
Publikováno v:
Superlattices and Microstructures. 30:231-239
In this work, the off-state breakdown characteristics of two different types InGaP-based high-barrier gate heterostructure field-effect transistors are studied and demonstrated. These devices have different high-barrier gate structures, e.g. the i-In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06d6ecbc078665b24fd3b4052ec4654b
https://doi.org/10.1006/spmi.2001.1010
https://doi.org/10.1006/spmi.2001.1010
Autor:
Cheng-Zu Wu, C. Y. Chuen, Wei-Chou Wang, Wen-Hui Chiou, Chih-Hung Yen, Chin-Chuan Cheng, Wen-Chau Liu
Publikováno v:
Le Journal de Physique IV. 11:Pr3-957
A new S-shaped switch based on the InP/InGaAlAs material system has been successfully fabricated and demonstrated. Due to the avalanche multiplication and potential redistribution process, the interesting multiple-negative-differential-resistance (MN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::830dbc1ac448e43d8d6f1d3a1f742668
https://doi.org/10.1051/jp4:20013120
https://doi.org/10.1051/jp4:20013120
Autor:
Wen-Hui Chiou, Cheng-Zu Wu, Chih-Hung Yen, Hsi-Jen Pan, Wen-Chau Liu, Kuan-Po Lin, Chin-Ying Chen
Publikováno v:
Le Journal de Physique IV. 11:Pr3-931
We propose two InGaP/GaAs resonant tunneling bipolar transistors (RTBT's) with different superlattice (SL) structures in the emitters. Based on the calculations of transmission probability, the ground-state and first excited-state minibands are estim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd22a9251d65b10324a288f4c6ff1adc
https://doi.org/10.1051/jp4:20013116
https://doi.org/10.1051/jp4:20013116
Autor:
Li-Wei Sung, Xing-Jian Guo, Fei-Chang Hwang, Yi-Tsuo Wu, Wen-Chang Jiang, Chiu-Yueh Liang, Ferng-Jye Lay, Cheng-Zu Wu, Hao-Hsiung Lin, Pai-Yong Wang, Chin-An Chang
Publikováno v:
Journal of Crystal Growth. 225:550-555
InAs quantum dots were formed by depositing monolayers of InAs on GaAs, covered with InGaAs, and flanged with GaAs barriers. This formed a single quantum well in the present study, as grown by molecular-beam epitaxy. Both multiple quantum wells (MQW)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f6cea5956425d6ad03bd2316b746866
https://doi.org/10.1016/s0022-0248(01)00951-4
https://doi.org/10.1016/s0022-0248(01)00951-4
Autor:
Kuo-Hui Yu, Hsi-Jen Pan, Cheng-Zu Wu, Wei-Chou Wang, Lih-Wen Laih, Kun-Wei Lin, S.C. Feng, Wen-Chau Liu
Publikováno v:
Solid-State Electronics. 45:489-494
An interesting InGaP/GaAs resonant-tunneling heterojunction bipolar transistor incorporating a superlattice (SL) structure in the emitter has been fabricated and studied. With the n-type doped well, the strongly coupling effect dominating the biased
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2632a18808de689c625881c7d2c1de47
https://doi.org/10.1016/s0038-1101(01)00028-4
https://doi.org/10.1016/s0038-1101(01)00028-4
Autor:
Cheng-Zu Wu, Kun-Wei Lin, Wei-Chou Wang, Shiou-Ying Cheng, Lih-Wen Laih, Kuo-Hui Yu, Wen-Chau Liu, Hsi-Jen Pan
Publikováno v:
Superlattices and Microstructures. 29:111-119
An InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) has been fabricated and demonstrated. The influence of the superlattice and emitter thickness on the device characteristics is studied. The insertion of the superlatti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6ddb40866081e4864d779e8d04dbf84
https://doi.org/10.1006/spmi.2000.0960
https://doi.org/10.1006/spmi.2000.0960
Publikováno v:
Journal of Crystal Growth. 223:92-98
Multiple quantum wells (MQW) and laser-containing InAs quantum dots were grown on GaAs using molecularbeam epitaxy. For the MQW, the wells consisted of monolayers of InAs covered by In0.15Ga0.85As, with the barrier layers being GaAs. The photolumines
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::983211db40dea429e0a1348e1016be31
https://doi.org/10.1016/s0022-0248(00)01019-8
https://doi.org/10.1016/s0022-0248(00)01019-8