Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Cheng-Yen Chien"'
Publikováno v:
Materials & Design, Vol 210, Iss , Pp 110107- (2021)
Accumulated spatters not only deteriorate the quality of the built parts in terms of surface roughness and/or density but also sabotage the whole fabrication process via damaging the powder re-coater. A cross-flow of inert gas inside the processing c
Externí odkaz:
https://doaj.org/article/dc28f3586dfa4072b0d6d65ddec674f1
Autor:
Cheng-Yen Chien, Wen-Hsin Wu, Yao-Hong You, Jun-Huei Lin, Chia-Yu Lee, Wen-Ching Hsu, Chieh-Hsiung Kuan, Ray-Ming Lin
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-5 (2017)
Abstract We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We
Externí odkaz:
https://doaj.org/article/520556ee952e472dbd0197637f946e44
Publikováno v:
Materials & Design, Vol 210, Iss, Pp 110107-(2021)
Accumulated spatters not only deteriorate the quality of the built parts in terms of surface roughness and/or density but also sabotage the whole fabrication process via damaging the powder re-coater. A cross-flow of inert gas inside the processing c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d493e26d2a6fcb6eb9c2422de705e1f3
http://www.sciencedirect.com/science/article/pii/S0264127521006626
http://www.sciencedirect.com/science/article/pii/S0264127521006626
Autor:
Cheng-Yen Chien, 簡丞彥
103
We investigate the speckle noise suppression by using the polymer dispersed liquid crystals (PDLC). The LC mixtures were prepared by doping the monomer (0C) with different concentrations (3 wt%, 5 wt% and 7 wt%) into the nematic liquid cryst
We investigate the speckle noise suppression by using the polymer dispersed liquid crystals (PDLC). The LC mixtures were prepared by doping the monomer (0C) with different concentrations (3 wt%, 5 wt% and 7 wt%) into the nematic liquid cryst
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/9t9jgu
Autor:
Chieh-Hsiung Kuan, Yu-Jen Lee, Chiu-Chang Huang, Vincent Yi Fong Su, Cheng-Yen Chien, Meng-Hsin Chen, Chia-Wei Pai
Publikováno v:
Conference on Lasers and Electro-Optics.
A method for the modulation of QCSE inside multiple-quantum wells of InGaN-based LEDs is proposed and confirmed with photoluminescence, Raman spectra, and electroluminescence using an integrating sphere.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::113a5f184101c1ef31fdb67a2a265bca
https://doi.org/10.1364/cleo_si.2020.stu3p.6
https://doi.org/10.1364/cleo_si.2020.stu3p.6
Autor:
Chia-Yu Lee, Chieh-Hsiung Kuan, Ray-Ming Lin, Cheng-Yen Chien, Wen-Hsin Wu, Wen-Ching Hsu, Yao-Hong You, Jun-Huei Lin
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-5 (2017)
Nanoscale Research Letters
Nanoscale Research Letters
We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fdbd96f5ef13a0c23d0d820530c9cf00
http://link.springer.com/article/10.1186/s11671-017-2189-3
http://link.springer.com/article/10.1186/s11671-017-2189-3
Publikováno v:
Proceedings of the 2019 2nd International Conference on Electronics, Communications and Control Engineering.
An efficient method to modify the defect density of a gallium nitride (GaN) epi-wafer is proposed in this study. A patterned sapphire substrate (PSS) was used here acting as the medium for defect adjustment. The characteristics of yielded samples wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e25a49e6f6b2413099741edf44c30409
https://doi.org/10.1145/3324033.3324043
https://doi.org/10.1145/3324033.3324043
Publikováno v:
Proceedings of the 2019 2nd International Conference on Electronics, Communications and Control Engineering.
AlGaN/GaN heterojunction is a well-known material because of its large critical electric field and high chemical stability. There's a lots of applications such as LED, optical devices, high-frequency transistor, etc. Therefore, we can use this materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aa37762bc81a52491da426bf9743e7d
https://doi.org/10.1145/3324033.3324038
https://doi.org/10.1145/3324033.3324038
Autor:
Cheng-Che Lee, Cheng-Yen Chien, Wen-I Cheng, Cheng-Wei Yen, Po-Yuan Hu, Kiu-Tshiong Huang, Chieh-Hsiung Kuan
Publikováno v:
ECS Meeting Abstracts. :1286-1286
INTRODUCTION Recently, the interest in high quality GaN films has in-creased, GaN and its alloys show good performance at high-power, high-frequency transistors. Because of large mismatches of lattice constant and thermal expansion between GaN epitax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3313aa189f6f7f7e4bebe1ffb5a71394
https://doi.org/10.1149/ma2019-01/26/1286
https://doi.org/10.1149/ma2019-01/26/1286