Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Cheng-Ya Yu"'
Autor:
Kao, Cheng-Yen, Kuo, Pei-Yun, Lin, Chih-Chieh, Cheng, Ya-Yu, Wang, Ming-Cheng, Chen, Yu-Chen, Lin, Wei-Hung
Publikováno v:
In Journal of Infection and Public Health December 2024 17(12)
Autor:
Kuo, Pei-Yun, Lin, Wei-Hung, Tang, Shu-Fei, Cheng, Ya-Yu, Bregente, Carl Jay Ballena, Thi Thuy Duong, Tran, Wang, Ming-Cheng, Teng, Ching-Hao, Hsieh, Yi-Hsien, Tsai, Pei-Fang, Li, Ying-Chi, Kao, Cheng-Yen
Publikováno v:
In Journal of Infection and Public Health March 2024 17(3):457-463
Akademický článek
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Akademický článek
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Publikováno v:
In Journal of Microbiology, Immunology and Infection December 2015 48(6):613-617
Autor:
Cheng-Ya Yu, Chang-Fu Kuo, I-Jun Chou, Jung-Sheng Chen, Hung-Yi Lu, Chao-Yi Wu, Li-Chen Chen, Jing-Long Huang, Kuo-Wei Yeh
Publikováno v:
Lupus. 31(8)
Objectives Systemic lupus erythematosus (SLE) is a female-dominated autoimmune disease that can occur at any age and has a diverse course. The clinical manifestation of this disease can vary depending on the patient’s age at onset. The aim of this
Publikováno v:
Physical Review Applied. 14
The present-day nanodevice dimensions continuously shrink, with the aim to prolong Moore's law. As downsizing meticulously persists, undesirable dynamic defects, which cause low-frequency noise and structural instability, play detrimental roles on li
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
Graphene oxide, which owns negative fixed charge is evaluated to be the passivation film of commercial Si pn solar cells. The high-temperature co-firing process for contact formation was proved to degrade the passivation effects of GO. Hence, we appl
Autor:
Chia-Ting Cho, Wei Shuo Ho, Chee-Wee Liu, Ming-Han Liao, Cheng-Han Lee, Cheng-Yi Peng, Yen-Yu Chen, Cheng-Ya Yu, Chieh-Chun Chang, Chu-Hsuan Lin, Ying-Jhe Yang
Publikováno v:
IEEE Transactions on Nanotechnology. 7:558-564
The multicolor absorption of MOS SiGe/Si quantum-dot (QD) infrared photodetectors is demonstrated using the boron delta-doping in Si spacers. The energy-dispersive X-ray spectroscopy shows that the Ge concentration in the wetting layers is much small
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 16:656-659
The instantaneous switch-off of the gas precursors during the ramp-down cycle in a spike ramp process is demonstrated to be an effective method to enhance the reliability of rapid thermal oxide. Due to the slow ramp-down rate (60/spl deg/C-90/spl deg