Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Cheng-Wei Tung"'
Autor:
Cheng-Wei Tung, 董正偉
101
In recent years, due to the development of cloud computing and mobile device innovation, the personal file sharing has become increasingly important for everyone. In this thesis we propose a privacy-preserving personal file sharing mechanism
In recent years, due to the development of cloud computing and mobile device innovation, the personal file sharing has become increasingly important for everyone. In this thesis we propose a privacy-preserving personal file sharing mechanism
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/56141560461377438112
Autor:
Cheng-Wei Tung, 董承瑋
99
In this thesis, the resistance switching characteristic of Zn:SiO2 -based memory was studied. The resistive memory was fabricated by sputtering to deposit the Metal/Insulator/Metal (MIM) structure. The top and bottom layers were made by Pt an
In this thesis, the resistance switching characteristic of Zn:SiO2 -based memory was studied. The resistive memory was fabricated by sputtering to deposit the Metal/Insulator/Metal (MIM) structure. The top and bottom layers were made by Pt an
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/14973821867573283320
Autor:
Cheng-Wei Tung, 董鈞瑋
92
A monolithic analog front-end circuit for ECG acquisition system is described in this thesis. The system includes the instrumentation, which is based on the current balancing technique that ensures this type of circuit to achieve high immunit
A monolithic analog front-end circuit for ECG acquisition system is described in this thesis. The system includes the instrumentation, which is based on the current balancing technique that ensures this type of circuit to achieve high immunit
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/73791390117504859206
Autor:
Cheng-Wei Tung
Thesis (M.A.)--National Taiwan University Graduate Institute of Electrical Engineering
Non-Latin script record. Includes bibliographical references
Non-Latin script record. Includes bibliographical references
Autor:
Tzeng, Wen-Chii, Feng, Hsin-Pei, Cheng, Wei-Tung, Lin, Chia-Huei, Chiang, Li-Chi, Pai, Lu, Lee, Chun-Lan
Publikováno v:
In Nurse Education Today December 2016 47:37-42
Autor:
Hsieh, Po-Shiuan *, Tai, Yueh-Hua, Loh, Ching-Hui, Shih, Kuang-Chung, Cheng, Wei-Tung, Chu, Chi-Hong
Publikováno v:
In Metabolism 2005 54(2):157-164
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 61:149-161
This paper studies and implements motion imitation interaction between a humanoid robot and a human. To achieve the implementation, three main processes are required. The first is the human motion data acquisition; the second is the motion data modif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::958583feb90bd3b667d92bdea4f5a5f2
https://doi.org/10.1109/tim.2011.2161025
https://doi.org/10.1109/tim.2011.2161025
Autor:
Dershin Gan, Chih-Hung Pan, Jia-Jie Wu, Kuan-Chang Chang, Tai-Fa Young, Simon M. Sze, Ying Hu, Yong-En Syu, Jung-Hui Chen, Yu-Ting Su, Geng-Wei Chang, Kai-Huang Chen, Ting-Chang Chang, Tsung-Ming Tsai, Hui-Chun Huang, Tian-Jian Chu, Ya-Hsiang Tai, Jian-Yu Chen, Min-Chen Chen, Cheng-Wei Tung, Hsing-Hua Wu
Publikováno v:
IEEE Electron Device Letters. 34:511-513
To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37b7c0590c9d019e9ffca553349da6c9
https://doi.org/10.1109/led.2013.2248075
https://doi.org/10.1109/led.2013.2248075
Autor:
Dershin Gan, Ya-Hsiang Tai, Yu-Ting Su, Jhih-Hong Pan, Tsung-Ming Tsai, Guan-Ru Liu, Hsing-Hua Wu, Ting-Chang Chang, Jian-Yu Chen, Min-Chen Chen, Tian-Jian Chu, Cheng-Wei Tung, Simon M. Sze, Kuan-Chang Chang, Geng-Wei Chang, Yong-En Syu, Jung-Hui Chen, Hui-Chun Huang
Publikováno v:
IEEE Electron Device Letters. 34:399-401
Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c807c7f852134f538106c05832cb2108
https://doi.org/10.1109/led.2013.2241725
https://doi.org/10.1109/led.2013.2241725
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