Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Cheng-Qun Gui"'
Autor:
De-Kun Yang, Du Wang, Qiu-Shi Huang, Yi Song, Jian Wu, Wen-Xue Li, Zhan-Shan Wang, Xia-Hui Tang, Hong-Xing Xu, Sheng Liu, Cheng-Qun Gui
Publikováno v:
Chip, Vol 1, Iss 3, Pp 100019- (2022)
Extreme ultraviolet lithography (EUVL) has been demonstrated to meet the industrial requirements of new-generation semiconductor fabrication. The development of high-power EUV sources is a long-term critical challenge to the implementation of EUVL in
Externí odkaz:
https://doaj.org/article/c221e40df43c496a963b38514b7fd8d8
Autor:
Peter Theodorus Maria Giesen, Wim J. M. de Laat, Cheng-Qun Gui, Maria Peter, François Furthner, Erwin R. Meinders
Publikováno v:
SPIE Proceedings.
In this paper we report the use of projection optical lithography to pattern micron-sized features on 100 μm thick PEN foils. A foil-on-carrier lamination process was developed to ensure a good dimensional stability during the lithographic processin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96be02d825a747c2738a4ac87d46f2f6
https://doi.org/10.1117/12.771947
https://doi.org/10.1117/12.771947
Publikováno v:
5th International Energy Conversion Engineering Conference and Exhibit (IECEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c48a00d33534156453ca19dbde48d004
https://doi.org/10.2514/6.2007-4782
https://doi.org/10.2514/6.2007-4782
Autor:
Cheng-Qun Gui, Erwin R. Meinders, Maria Peter, Wim J. M. de Laat, Peter Theodorus Maria Giesen
Publikováno v:
MRS Proceedings. 1030
Manufacturing transistors on thin flexible polymer foils is challenging and differs from standard Si processing due to the dimensional instability of the substrate influenced by moisture uptake, temperature and handling. A thorough analysis of materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cb7c893f54fb14b48241f73525c0916
https://doi.org/10.1557/proc-1030-g04-04
https://doi.org/10.1557/proc-1030-g04-04
Publikováno v:
SPIE Proceedings.
The increased demand for high throughput lithography with Front To Back-side Alignment (FTBA) capability has led ASML to develop the FTBA functionality within its current platform. This option is named 3DAlign and aims at an FTBA overlay of 500 nm. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f87c475ad2978367153e74b2902a8b56
https://doi.org/10.1117/12.487585
https://doi.org/10.1117/12.487585
Publikováno v:
Emerging Lithographic Technologies VI.
A novel front-to-back alignment method, which does not require additional alignment sensors, is being developed for optical projection lithography tools. The system is designed such that it can be easily retrofitted to existing systems. By embedding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4118ff10f545a2812699dbe0efc1726a
https://doi.org/10.1117/12.472359
https://doi.org/10.1117/12.472359
Publikováno v:
Sensors and Actuators B: Chemical. 14:736-738
The resonant sensing theory has been widely studied throughout the world. Some practical sensors have been used in many fields over the past twenty years [l]. However, in most of these investigations, the measurement is usually realized by measuring
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e430d089cf6157b9c7ef9d436c0599b1
https://doi.org/10.1016/0925-4005(93)85164-6
https://doi.org/10.1016/0925-4005(93)85164-6
Publikováno v:
Sensors and Actuators B: Chemical. 14:700-702
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70d95f7b075bc6933f93b67d9b788ddc
https://doi.org/10.1016/0925-4005(93)85150-9
https://doi.org/10.1016/0925-4005(93)85150-9
Publikováno v:
SPIE Proceedings.
The mechanism of direct bonding at room temperature has been attributed to the short range inter-molecular and inter-atomic attraction forces, such as Van der Waals forces. Consequently, the wafer surface smoothness becomes one of the most critical p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca1b99696fb49d4e526c3f3c3b35c653
https://doi.org/10.1117/12.364303
https://doi.org/10.1117/12.364303