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pro vyhledávání: '"Cheng-Kun Xiong"'
Si/a-Si:H heterojunction microwave bipolar transistors with cut-off frequencies f/sub t/ above 5 GHz
Autor:
Cheng-Kun Xiong, Kun-Chun Mao, Jian-Yuan Wang, Xiao-Ming Zhang, En-Jun Zhu, Wen-Wei Sheng, Yin-Sheng Wang
Publikováno v:
IEEE Transactions on Electron Devices. 37:153-158
The fabrication of a silicon heterojunction microwave bipolar transistor with an n/sup +/ a-Si:H emitter is discussed, and experimental results are given. The device provides a base sheet resistance of 2 k Omega / Square Operator a base width 0.1 mu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc5efd1da471a81c24555a89bb061ffa
https://doi.org/10.1109/16.43812
https://doi.org/10.1109/16.43812
Autor:
Yin-Sheng Wang, Wen-Wei Sheng, Cheng-Kun Xiong, En-Jun Zhu, Xiao-Ming Zhang, Jian-Yuan Wang, Kun-Chun Mao
Publikováno v:
IEEE Transactions on Electron Devices; 1990, Vol. 37 Issue 1, p153-158, 6p