Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Cheng-Hsueh Lu"'
Autor:
Cheng-Hsueh Lu, 呂政學
94
This thesis presents the achievements reached in the development of InGaN/GaN multiple quantum well laser diodes on sapphire substrate. 1. Using an In0.3Ga0.7N capping layer and shallow mesa structure, which improves the p contact resistance
This thesis presents the achievements reached in the development of InGaN/GaN multiple quantum well laser diodes on sapphire substrate. 1. Using an In0.3Ga0.7N capping layer and shallow mesa structure, which improves the p contact resistance
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/9z8s6d
Autor:
Cheng-Hsueh Lu, 呂政學
93
Hafnium oxide (HfOx) and hafnium oxynitride (HfOxNy) gate dielectrics were prepared by reactive magnetron sputtering from Hf target, following by postdeposition annealing at 700 ℃ in N2 ambient. We investigated the material and electrical c
Hafnium oxide (HfOx) and hafnium oxynitride (HfOxNy) gate dielectrics were prepared by reactive magnetron sputtering from Hf target, following by postdeposition annealing at 700 ℃ in N2 ambient. We investigated the material and electrical c
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/56009943051926042930
Publikováno v:
Nano Energy. 28:373-379
InGaN based light emitting diodes (LEDs) suffer from the adverse influence of band tilt due to the piezoelectric field induced quantum-confined Stark effect (QCSE). We demonstrate incremental recovering of QCSE induced band tilt along with its impact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd370d0b04fe695e8c3d48581df1e480
https://doi.org/10.1016/j.nanoen.2016.08.061
https://doi.org/10.1016/j.nanoen.2016.08.061
Publikováno v:
Journal of Display Technology. 12:869-872
A facile method for fabricating near ultraviolet light-emitting diodes (NUV LEDs) with better crystal quality and enhanced light emission is demonstrated by tuning total working pressure to modify the morphology of the buffer layer. With the conditio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f12e05737f87d59ff44880a7d4c7112
https://doi.org/10.1109/jdt.2016.2535185
https://doi.org/10.1109/jdt.2016.2535185
Publikováno v:
Journal of Alloys and Compounds. 669:156-160
InGaN/GaN multiple-quantum-wells (MQWs) in green light emitting diodes (G-LEDs) containing embedded quantum dots (QDs) inside or extruded 3D-like QDs with various size distributions produced via spinodal decomposition are grown by metal-organic chemi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb059574a916d606ad47d02496d7a394
https://doi.org/10.1016/j.jallcom.2016.01.237
https://doi.org/10.1016/j.jallcom.2016.01.237
Autor:
Chia Hao Tu, Jarrn-Horng Lin, Shih-Ting Wang, Cheng-Hsueh Lu, Chen Hui Chen, Yi Jyun Cai, Yen Chih Chen, Chuan-Pu Liu, Yi Chang Li, Ching Han Wu
Publikováno v:
Carbon. 84:272-279
A method is developed for growing three-dimensional hierarchic structures of porous graphenic carbon film/hollow carbon nanorods where porous graphenic carbon film is first synthesized followed by, growth of carbon nanorods. By annealing an amorphous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22029f5d602b530c3ad3cc56b0e746b4
https://doi.org/10.1016/j.carbon.2014.11.059
https://doi.org/10.1016/j.carbon.2014.11.059
Autor:
Hung Jen Chang, Yi Chang Li, Ruey Chi Wang, Chao-Hung Wang, Hisn Chiao Fang, Michael R. S. Huang, Chia Hao Tu, Che Chia Chang, Yen Chih Chen, Yonhua Tzeng, Cheng-Hsueh Lu, Chuan-Pu Liu
Publikováno v:
Journal of Alloys and Compounds. 615:754-760
We propose a simple system to investigate the influence of microstructure on the resistive switching behavior via bi-crystal CuO nanowires. CuO nanowires are prepared by thermally oxidizing transmission electron microscopy copper grids in air. Single
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9be065f26080d585d44545c9f54d7070
https://doi.org/10.1016/j.jallcom.2014.05.145
https://doi.org/10.1016/j.jallcom.2014.05.145
Publikováno v:
Journal of Alloys and Compounds. 585:460-464
An approach for fabricating localized surface plasmon (LSP)-enhanced light-emitting diodes (LEDs) with Ag nanoparticles (NPs) in close proximity to the active layers is demonstrated. The blue light emission from InGaN/GaN multiple quantum wells (MQWs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::459ceb6c722da1f8d497054790c999c7
https://doi.org/10.1016/j.jallcom.2013.09.164
https://doi.org/10.1016/j.jallcom.2013.09.164
Publikováno v:
Journal of Electronic Materials. 42:2549-2555
Highly crystalline and thermally stable undoped CeO2 and Y-doped mesoporous CeO2 particles have been synthesized from cerium(III) nitrate hexahydrate [Ce(NO3)3·6H2O] by the sol–gel method. Mesoporous CeO2 doped with 2 mol.% Y2O3 and calcined at 50
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e469430d0c14390e433c05deb8e1da14
https://doi.org/10.1007/s11664-013-2622-z
https://doi.org/10.1007/s11664-013-2622-z
Autor:
Yi Chang Li, Yen Hsiang Chen, Yen Lin Lai, Sheng Chieh Tsai, Yun Li Li, Cheng-Hsueh Lu, Chuan-Pu Liu
Publikováno v:
Journal of Alloys and Compounds. 555:250-254
InGaN/GaN-based green light-emitting diodes (LEDs) with high-density ultra-small In-rich quantum dots (QDs) embedded in InGaN multiple quantum wells via spinodal decomposition are grown by metal organic chemical vapor deposition. The density and aver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dbbc9d519abbb4d5e446316ddc06152
https://doi.org/10.1016/j.jallcom.2012.12.069
https://doi.org/10.1016/j.jallcom.2012.12.069