Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Cheng-Hsiung Yen"'
Autor:
Cheng-Hsiung Yen, 顏政雄
97
In this study, we compare the photo-electrochemical (PEC) properties of n- and p-GaN modified with gold nano-particle in 1M HCl solution for water splitting. The Au nano-particle was deposited on GaN by ion beam sputtering system, with the av
In this study, we compare the photo-electrochemical (PEC) properties of n- and p-GaN modified with gold nano-particle in 1M HCl solution for water splitting. The Au nano-particle was deposited on GaN by ion beam sputtering system, with the av
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/77510140374666279090
Autor:
Cheng-Hsiung Yen, 顏正雄
97
Han Yu, who was also named Tuizhi, was a famous writer, thinker, and outstanding statesman and educationalist. He was born in A.D. 768 years and died in A.D. 824 years. He lived for 57 years. Han Yu thought he inherited Confucius and Mencius
Han Yu, who was also named Tuizhi, was a famous writer, thinker, and outstanding statesman and educationalist. He was born in A.D. 768 years and died in A.D. 824 years. He lived for 57 years. Han Yu thought he inherited Confucius and Mencius
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/39631625838322645636
Autor:
Yu-Zung Chiou, Wei-Chih Lai, Chun-Chi Hung, Chun-Kai Wang, Sheng Po Chang, Cheng-Hsiung Yen, Shoou-Jinn Chang
Publikováno v:
IEEE Sensors Journal. 15:4743-4748
GaN metal-semiconductor–metal (MSM) ultraviolet photodetectors (PDs) with ex situ sputtered AlN nucleation layer were investigated and demonstrated. The crystal quality, electrical, and optical properties of GaN PDs were improved using ex situ sput
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6210279b792da0447bbc0ddda2a964b
https://doi.org/10.1109/jsen.2015.2425657
https://doi.org/10.1109/jsen.2015.2425657
Publikováno v:
IEEE Transactions on Electron Devices. 62:1473-1477
The crystal quality, electrical, and optical characteristics of GaN solar cells (SCs) were improved using ex situ AlN nucleation layer. Replacing the in situ GaN nucleation layer with the sputtered ex situ AlN nucleation layer reduced the total dislo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2621e471713dad67cfb3b05a5ed33c1d
https://doi.org/10.1109/ted.2015.2415254
https://doi.org/10.1109/ted.2015.2415254
Autor:
Kuei-Hsien Chen, Li-Chyong Chen, Wen-Hsun Tu, Jih Shang Hwang, Cheng-Hsiung Yen, Yu-Kuei Hsu, Chih-I Wu
Publikováno v:
Electrochemistry Communications, Vol 13, Iss 6, Pp 530-533 (2011)
Systematic investigations of photoelectrochemical behavior between Au nano-particle modified n- and p-GaN were reported in this study. With Au nanoparticles sputtered on the surface, strong Fermi level pinning caused by the creation of metal induced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5979204782917693c974af0cdb986c5e
http://www.sciencedirect.com/science/article/pii/S1388248111000993
http://www.sciencedirect.com/science/article/pii/S1388248111000993
Autor:
Wei-Chih Lai, Po Cheng Chen, Ming-Lun Lee, Jinn-Kong Sheu, Yu Hsiang Yeh, Y. C. Yang, Cheng-Hsiung Yen
Publikováno v:
IEEE Electron Device Letters. 34:1542-1544
The performance of GaN-based flip-chip light-emitting diodes (LEDs) with embedded air voids grown on a selective-area Ar-implanted sapphire (SAS) substrate was demonstrated in this letter. The GaN-based epitaxial layers grown on Ar-implanted regions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8074b2a917d1bec08d2d31f323e0de60
https://doi.org/10.1109/led.2013.2285305
https://doi.org/10.1109/led.2013.2285305
Autor:
Chun-Kai Wang, Tsun-Kai Ko, Wei-Chih Lai, Ya-Yu Yang, Shoou-Jinn Chang, Schang-Jing Hon, Cheng-Hsiung Yen
Publikováno v:
IEEE Photonics Technology Letters. 24:294-296
The crystal quality, electrical, and optical characteristics of GaN-based light-emitting diodes (LEDs) were improved using a sputtered AlN nucleation layer. Replacing the in situ AlN nucleation layer with the sputtered AlN nucleation layer reduced th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1050e0070144a9992abb0da2d7f3af0c
https://doi.org/10.1109/lpt.2011.2177654
https://doi.org/10.1109/lpt.2011.2177654
Autor:
W.C. Lai, Yu Hsiang Yeh, Po Cheng Chen, Jinn-Kong Sheu, Cheng Hsiung Yen, Y. C. Yang, Ming-Lun Lee
Publikováno v:
SPIE Proceedings.
GaN-based flip-chip light emitting diodes (FC-LEDs) with embedded air voids grown on a selective-area Arimplanted AlN/sapphire (AIAS) substrate was demonstrated in this study. The proposed FC LED with an embedded light scattering layer can destroy th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71887cda5041888b02ef7261a54875e8
https://doi.org/10.1117/12.2060386
https://doi.org/10.1117/12.2060386
Publikováno v:
Optics Express. 22:A663
The operating voltage, light output power, and efficiency droops of GaN-based light emitting diodes (LEDs) were improved by introducing Mg-doped AlGaN/InGaN superlattice (SL) electron blocking layer (EBL). The thicker InGaN layers of AlGaN/InGaN SL E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::740196984ac0f5055802ad17d0c2a591
https://doi.org/10.1364/oe.22.00a663
https://doi.org/10.1364/oe.22.00a663