Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Cheng-Han Ly"'
Publikováno v:
Journal of Applied Physics; 4/15/2005, Vol. 97 Issue 8, p083517, 10p, 1 Chart, 13 Graphs
Autor:
Alan T. Collins, Cheng-Han Ly
Publikováno v:
Journal of Physics: Condensed Matter. 14:L467-L471
The annealing of electron-irradiated type IaB diamond at 1600 °C substantially reduces the concentration of H4 centres, and increases the concentration of H3 centres. In addition, defects are created producing absorption in zero-phonon lines near 53
Publikováno v:
Journal of Applied Physics. 97:083517
Diamonds previously subjected to radiation damage have been annealed at temperatures up to 1750°C at ambient pressure, and at 2300°C using a stabilizing pressure of 5GPa. The results have been compared with those from similar measurements using nat
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-7 (2018)
Abstract We demonstrate the fabrication and characterization of silicon nanowire-based devices in metal-nanowire-metal configuration using direct current dielectrophoresis. The current-voltage characteristics of the devices were found rectifying, and
Externí odkaz:
https://doaj.org/article/2b31c4c22a9a47ee93b3dd5bc6f61a34
Autor:
Cheng-Han Lyu, 呂承翰
104
Recently, metal-oxide semiconductor-based gas sensors have gotten a great attention due to their special advantages, such as low cost, high performance and easily fabricated. ZnO has been extensively studied, because it can be applied to sen
Recently, metal-oxide semiconductor-based gas sensors have gotten a great attention due to their special advantages, such as low cost, high performance and easily fabricated. ZnO has been extensively studied, because it can be applied to sen
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/56365544500545993712