Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Cheng-Chen Hsueh"'
Autor:
Cheng-Chen Hsueh, 薛正誠
94
One of the key elements in running a successful semiconductor or integrated circuits (IC) production line is the capability for a fab to quickly ramp up new process technologies with good yield. Fast yield learning is closely related to the r
One of the key elements in running a successful semiconductor or integrated circuits (IC) production line is the capability for a fab to quickly ramp up new process technologies with good yield. Fast yield learning is closely related to the r
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/43751760384424227654
Autor:
Cheng-Chen Hsueh, S. Pan, Hsueh-Hao Shih, Yaw-Lin Hwang, Kuang-Chao Chen, Yun-Chi Yang, Chih-Yuan Lu, H. Chung, Tzung-Ting Han, Tuung Luoh
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 16:155-164
A new polysilicon grain engineering technology for the improvement of over erase in 0.18-/spl mu/m floating-gate flash memory has been developed with the use of single-wafer polysilicon processing, which makes it practical to use hydrogen as a proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5510a18c68598a6021dc7959d6262b2
https://doi.org/10.1109/tsm.2003.810937
https://doi.org/10.1109/tsm.2003.810937
Autor:
Hsueh-Hao Shih, Cheng-Chen Hsueh, S. Pan, Kuang-Chao Chen, Chih-Yuan Lu, Yaw-Lin Hwang, H. Chung
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 16:128-137
The application of single-wafer processing in semiconductor manufacturing has long been touted as the most effective way in reducing cycle time in a production environment as well as shortening the learning cycle for process development. However, one
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bec64641d094e9cddb1c50c09c379de
https://doi.org/10.1109/tsm.2003.810942
https://doi.org/10.1109/tsm.2003.810942
Autor:
Shu-Ya Hsu, Chih-Yuan Lu, Yaw-Lin Hwang, Tzu-Yu Wang, Cheng-Chen Hsueh, H. Chung, Hsueh-Hao Shih, Kuang-Chao Chen, S. Pan
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 16:147-154
Feasibility of single-wafer rapid-thermal process as an alternative to the conventional batch-type furnace process is evaluated on a 0.15-/spl mu/m 128-Mb mask read only memory (MROM) product. Excellent gate oxide integrity and device characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10f1d597bf494fc5a2b12185deeb4365
https://doi.org/10.1109/tsm.2003.810938
https://doi.org/10.1109/tsm.2003.810938
Publikováno v:
IEEE Electron Device Letters. 24:562-564
A plasma polymerization coating process named Dielectric Resolution Enhancement Coating Technology (DiRECT) is proposed to shrink critical dimensions (CDs) of space and hole patterns. Fluorocarbon plasmas are used as the precursors to coat a polymer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5041e9bf387c5dd2eeb1bbe2a2c8897f
https://doi.org/10.1109/led.2003.816592
https://doi.org/10.1109/led.2003.816592
Autor:
Martha L. Mecartney, Cheng-Chen Hsueh
Publikováno v:
Journal of Materials Research. 6:2208-2217
A systematic investigation of the microstructural evolution of fast fired, sol-gel derived Pb(Zr, Ti)O3 films (Zr/Ti = 54/46) was performed by analytical transmission electron microscopy (TEM). It was found that the nucleation and growth of the sol-g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60077f7a4f8820e831c7ead046fb1b5a
https://doi.org/10.1557/jmr.1991.2208
https://doi.org/10.1557/jmr.1991.2208
Publikováno v:
[1991] Proceedings. IEEE Micro Electro Mechanical Systems.
Zinc oxide and ferroelectrics of the lead zirconate titanate (PZT) family are candidates for piezoelectric actuation as well as sensing elements in microelectromechanical systems. In this work the relevant properties of the thin film forms of these m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a34f1957ce77fa8851e5ec467063904
https://doi.org/10.1109/memsys.1991.114780
https://doi.org/10.1109/memsys.1991.114780
Autor:
Cheng-Chen Hsueh, Martha L. Mecartney
Publikováno v:
MRS Proceedings. 243
Transmission electron microscopy (TEM) was used to investigate the microstructural evolution of sol-gel derived ferroelectric PZT films. Aggregates of perovskite crystals nucleated and grew out of a pyrochlore matrix at 550°C. A dense, single-phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9292a23a8ed92d334e22e3942b078d54
https://doi.org/10.1557/proc-243-451
https://doi.org/10.1557/proc-243-451
Autor:
D.E. Glumac, P. J. Schiller, Cheng-Chen Hsueh, Dennis L. Polla, William P. Robbins, C. Ye, T. Tamagawa
Publikováno v:
MRS Proceedings. 243
Ferroelectric thin films have been deposited on polycrystalline silicon micromechanical structures to form both physical microsensors and microactuator devices. These devices which include acoustic pressure sensors, infrared detectors, micropositione
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71a99a17dede0ce19d9d23b10b5e7c3f
https://doi.org/10.1557/proc-243-55
https://doi.org/10.1557/proc-243-55
Autor:
Cheng-Chen Hsueh, Martha L. Mecartney
Publikováno v:
MRS Proceedings. 200
Ferroelectric PZT thin films were prepared by sol-gel methods and RF magnetron sputtering. Sputtered PZT fast fired at 650° for 30 minutes showed microporosity. For the sol-gel route, solution precursors had a significant effect on the microstructur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b35e1c294e0cfcc05a708fb8052b7d6d
https://doi.org/10.1557/proc-200-219
https://doi.org/10.1557/proc-200-219