Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Cheng-Che Li"'
Publikováno v:
Mediators of Inflammation, Vol 2017 (2017)
This study investigated the effects of a fish oil- (FO-) based lipid emulsion on muscle leukocyte chemotaxis and inflammatory responses in a murine model of limb ischemia-reperfusion (IR) injury. Mice were assigned randomly to 1 sham (sham) group, 2
Externí odkaz:
https://doaj.org/article/8ad79982577b42a69fa2eefee5df4b6c
Autor:
Cheng-Che Li, 李振澤
105
The purpose of this study is to explore the relationship between innovation, internationalization, and business performance in Taiwan’s semiconductor industry. This study applies a two-stage approach. First, it uses a dynamic data envelopm
The purpose of this study is to explore the relationship between innovation, internationalization, and business performance in Taiwan’s semiconductor industry. This study applies a two-stage approach. First, it uses a dynamic data envelopm
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/57t6s5
Autor:
Cheng-Che Li, 李政哲
104
As rapid growth of China economy in recent years that alters various international and cross-strait situations, our nation is accelerating the national defense reformation against any threat or challenge upon national security and the “enl
As rapid growth of China economy in recent years that alters various international and cross-strait situations, our nation is accelerating the national defense reformation against any threat or challenge upon national security and the “enl
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/s47u4z
Autor:
Cheng-che Li, 李成哲
102
In this research, we successfully deposited GaN and InGaN films by RF sputtering with single cermet targets. The targets were made by hot pressing the powder mixture of metallic Ga and In and ceramic GaN. The Ga content in targets was less t
In this research, we successfully deposited GaN and InGaN films by RF sputtering with single cermet targets. The targets were made by hot pressing the powder mixture of metallic Ga and In and ceramic GaN. The Ga content in targets was less t
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/06886560675614000290
Publikováno v:
International Journal of Business Excellence. 29:437
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c6fb98bfa3467ee930eb64446428c5d
https://doi.org/10.1504/ijbex.2023.129106
https://doi.org/10.1504/ijbex.2023.129106
Autor:
Kuang-Tse Ho, Cheng-Che Li
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper discusses the steps involved in the failure analysis of power semiconductor devices in which leakage currents are observed and can be traced to doping-profile variations in ion-implanted layers. The discovery and assessment of such defects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee250f24954ce8a3e37b44e677f6b5f6
https://doi.org/10.31399/asm.cp.istfa2021p0301
https://doi.org/10.31399/asm.cp.istfa2021p0301
Autor:
Kuang-Tse Ho, Cheng-Che Li
Publikováno v:
International Symposium for Testing and Failure Analysis.
Vertical-cavity surface-emitting lasers (VCSELs) have many advantages over edge-emitting devices, but they tend to be more sensitive to increasing current density both in lifetime and reliability. To better understand this relationship, the authors i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d6e73b303f0e158fc4f34bf236c982d
https://doi.org/10.31399/asm.cp.istfa2021p0296
https://doi.org/10.31399/asm.cp.istfa2021p0296
Publikováno v:
International Journal of Business Excellence. 1:1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27d13b6d473b042aacf60cca9f3d987b
https://doi.org/10.1504/ijbex.2020.10038602
https://doi.org/10.1504/ijbex.2020.10038602
Publikováno v:
Materials Science and Engineering: B. 193:13-19
Mg-doped InxGa1−xN (x = 0.025, 0.05, 0.075, and 0.1) films have been deposited on Si (1 0 0) substrates by RF reactive sputtering. Mg-InxGa1−xN films remained p-type conduction at x ≤ 0.075. This is the first try to have p-InGaN by sputtering.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47bb6f3b080fc8a974f9fcebd8094a00
https://doi.org/10.1016/j.mseb.2014.11.005
https://doi.org/10.1016/j.mseb.2014.11.005