Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Cheng Zhan Li"'
Publikováno v:
Chinese Physics B. 32:057305
Lateral type n-channel 4H-SiC metal--oxide--semiconductor field effect transistors (MOSFETs), fabricated using a current industrial process, are irradiated with gamma rays at different irradiation doses in this paper to carry out a profound study on
Publikováno v:
Materials Science Forum. 1004:1004-1009
The high-temperature (up to 200 °C) reliability analysis of 1200V/100A 4H-SiC JBS under 168 hours of high-temperature storage stress (HTSS), high-temperature reverse bias (HTRB) and high-humidity HTRB (H3TRB) stress test are reported. Results show t
Publikováno v:
Materials Science Forum. 963:562-566
Mechanisms and characteristics of optimized main junction for 4H-SiC trench junction barrier Schottky (TMJBS) diodes were investigated by theories and experiments. From these simulation and experimental values, we can conclude that TMJBS device has b
Autor:
Xiao Ping Dai, Tomasz Sledziewski, Tobias Erlbacher, Anton J. Bauer, Yan Li Zhao, Lothar Frey, Cheng Zhan Li, Xi Ming Chen
Publikováno v:
Materials Science Forum. 963:490-493
A comparison between self-aligned process (using lift-off) and Ni-SALICIDE used in fabrication of ohmic contacts for SiC Power MOSFET is done. Both processes are demonstrated for 3.3 kV SiC VDMOS transistors fabricated on 100 mm substrates. It is sho
Publikováno v:
International Communications in Heat and Mass Transfer. 131:105879
Publikováno v:
Huan jing ke xue= Huanjing kexue. 40(1)
To understand the spatiotemporal variation characteristics and sources of polycyclic aromatic hydrocarbons in karst groundwater in a strongly industrial city, the authors collected 23 groundwater samples in the water and dry period in Liuzhou using c
Publikováno v:
Materials Science Forum. 858:1036-1039
The 4H-SiC n-p-n BJT for ultraviolet detection with high optical gain is proposed and optimized in this paper. The effect of structural parameters of 4H-SiC phototransistor on the performance of the detectors is simulated and the effect mechanism is
Autor:
Jia Wu, Yi-Yu Wang, Zhao Yang Peng, Yi Dan Tang, Huajun Shen, Ke-An Liu, Xinyu Liu, Yun Bai, Cheng Zhan Li
Publikováno v:
Materials Science Forum. 858:647-650
Effects of NO and forming gas annealing treatment on the interface quality and reliability of 4H-SiC MOS were systematically studied by low temperature conductance measurements in combination with time-zero dielectric breakdown and time-dependent die
Publikováno v:
Materials Science Forum. 858:1202-1205
The n-p-i-n AlGaN solar-blind ultraviolet double heterojunction phototransistor (DHPT) with internal gain is proposed and optimized in this paper. The dependences of spectral responsivity and quantum gain on structure parameters of the AlGaN DHPT are
Publikováno v:
Materials Science Forum. :484-487
A high-temperature process is used to enhance the COxdesorption rate to reduce trap density in SiC/SiO2interface for SiC MOSFETs. Interface state density as measured by Terman method and C-ψs method for the oxidation processes at a high temperature