Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Cheng Tzong Horng"'
Autor:
Witold Kula, Terry Torng, Thomas M. Maffitt, Qiang Chen, Jonathan Z. Sun, Ruth Tong, Denny D. Tang, John K. DeBrosse, Robert Beach, Tai Min, Daniel C. Worledge, Cheng Tzong Horng, Mao-Min Chen, Po-Kang Wang, Guenole Jan, Tom Zhong, William J. Gallagher
Publikováno v:
IEEE Transactions on Magnetics. 46:2322-2327
Key design parameters of 64 Mb STT-MRAM at 90-nm technology node are discussed. A design point was developed with adequate TMR for fast read operation, enough energy barrier for data retention and against read disturbs, a write voltage satisfying the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61d550420b7b76fa467f396372ce0db4
https://doi.org/10.1109/tmag.2010.2043069
https://doi.org/10.1109/tmag.2010.2043069
Autor:
Gus Yeh, James L. Chao, Cherng-Chyi Han, D. Chabbra, Zhaoguo Jiang, Cheng Tzong Horng, Terry Torng, M. Sullivan, H.L. Hu, Brij B. Lal, Jei-Wei Chang, Yimin Guo, Ming M. Yang, S. Malhotra, Kochan Ju
Publikováno v:
IEEE Transactions on Magnetics. 35:683-688
We have demonstrated magnetic recording at an areal density of 5 Gb/in/sup 2/ using dual stripe magnetoresistive heads (DSMR) on low noise and low-glide height quaternary CoCrTa-based alloy thin film disks. The data rate is 120 Mb/sec with a PR4 chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2c6650f94689231abd7acfc6e571dbc
https://doi.org/10.1109/20.750628
https://doi.org/10.1109/20.750628
Autor:
O. Voegelli, Cheng Tzong Horng, Tai Min, S. Le, Yimin Guo, Liubo Hong, Mao-Ming Chen, Qiang Chen, Po-Kang Wang, Xizeng Shi
Publikováno v:
IEEE Transactions on Magnetics. 41:2664-2666
Using experimental and micromagnetic modeling, the intermediate magnetization states in deep submicrometer MRAM cells, their effects on the switching behavior and designs to eliminate them, are presented. The elliptical MRAM cell with varied aspect r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2030529c8c936e9b29bc88b59fd2d1d1
https://doi.org/10.1109/tmag.2005.854940
https://doi.org/10.1109/tmag.2005.854940
Autor:
K. Yang, Solomon Assefa, Cheng Tzong Horng, Yingdong Lu, Hao Yu, Eugene J. O'Sullivan, J. DeBrosse, Tai Min, Michael C. Gaidis, William J. Gallagher, Mao-Min Chen, J. Chien, A. Zhong, Witold Kula, P. Sherman, J. Yuan, Terry Torng, Sivananda K. Kanakasabapathy, Janusz J. Nowak, Qiang Chen, Masood Qazi, Po-Kang Wang, G. Liu, Jimmy Kan, S. Young, Jonathan Z. Sun, X. Lu, Robert Beach, S. Le, Denny D. Tang, Tom Zhong, Jia Chen, Thomas M. Maffitt, Ruth Tong, R. Xiao
Publikováno v:
2008 IEEE International Electron Devices Meeting.
We have demonstrated a robust magnetic tunnel junction (MTJ) with a resistance-area product RA=8 Omega-mum2 that simultaneously satisfies the statistical requirements of high tunneling magnetoresistance TMR > 15sigma(Rp), write threshold spread sigma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::867cd6bbb342255171ae2a5a782bd7f3
https://doi.org/10.1109/iedm.2008.4796679
https://doi.org/10.1109/iedm.2008.4796679