Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Cheng Tung Huang"'
An Investigation of Anode Hole Injection-Induced Abnormal Body Current in n-Channel HfO2/TiN MOSFETs
Autor:
Jih-Chien Liao, Ting-Chang Chang, Wei-Ren Syong, Kai-Chun Chang, Ying-Hsin Lu, Hsi-Wen Liu, Chien-Yu Lin, Li-Hui Chen, Fu-Yuan Jin, Yu-Hsuan Chen, Chen-Hsin Lien, Osbert Cheng, Cheng-Tung Huang, Yi-Han Ye
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 803-807 (2018)
This paper investigates an anode hole injection (AHI)-induced abnormal body current (abn IB) in n-channel HfO2/TiN MOSFETs. Traditionally, body current is independent of gate voltage during initial electrical characteristic measurements. Nevertheless
Externí odkaz:
https://doaj.org/article/fc94dd4ed6f6434084103894f7b2bc91
Autor:
Wei-Chun Hung, Fu-Yuan Jin, Kai-Chun Chang, Yi-Han Ye, Cheng Tung Huang, Yu-Shan Lin, Chien-Hung Yeh, Ting-Tzu Kuo, Ting-Chang Chang, Fong-Min Ciou, Osbert Cheng, Jui-Tse Hsu, Po-Hsun Chen, Jia-Hong Lin
Publikováno v:
IEEE Electron Device Letters. 42:1420-1423
In this study, we fabricated an n- type fin field-effect transistor (FinFET) and a p- type FinFET (p-FinFET) to compare their hot carrier degradation (HCD) in 14-nm technology nodes. We analyzed the HCD under different gate voltages ( $\text{V}_{\tex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ade1bdd6ee2b6bb3e967836ea1c1c63
https://doi.org/10.1109/led.2021.3106540
https://doi.org/10.1109/led.2021.3106540
Investigation of HCD- and NBTI-Induced Ultralow Electric Field GIDL in 14-nm Technology Node FinFETs
Autor:
Yen-Cheng Chang, Ting-Chang Chang, Yi-Han Ye, Jen-Wei Huang, Fong-Min Ciou, Wei-Chun Hung, Yun-Hsuan Lin, Yu-Shan Lin, Fu-Yuan Jin, Chien-Yu Lin, Jui-Tse Hsu, Yang-Hao Hung, Osbert Cheng, Kai-Chun Chang, Cheng Tung Huang
Publikováno v:
IEEE Transactions on Electron Devices. 67:2697-2701
The generation of defect states in p-MOSFETs under negative bias temperature instability (NBTI) has been extensively discussed in previous literature. However, only a few studies have discussed the relationship between interface defects and off -stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::136dd3b639fabf6c772f9b5b6aea3204
https://doi.org/10.1109/ted.2020.2992004
https://doi.org/10.1109/ted.2020.2992004
Autor:
Ting-Chang Chang, Fong-Min Ciou, Yi-Han Ye, Kai-Chun Chang, Jih-Chien Liao, Fu-Yuan Jin, Yen-Cheng Chang, Yun-Hsuan Lin, Yu-Shan Lin, Wei-Chun Hung, Kuan-Hsu Chen, Chien-Yu Lin, Osbert Cheng, Cheng Tung Huang, Yang-Hao Hung
Publikováno v:
IEEE Electron Device Letters. 41:15-18
This letter investigates the mechanism of abnormal substrate current ( $\text {I}_{\text {sub}}$ ) after hot carrier stress (HCS) in fin field effect transistors (FinFETs). Traditionally, after HCS, the drain current and $\text {I}_{\text {sub}}$ of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::308cf675d54e7eca649f7ef90725821a
https://doi.org/10.1109/led.2019.2953913
https://doi.org/10.1109/led.2019.2953913
Autor:
Yi-Han Ye, Wei-Chun Hung, Kai-Chun Chang, Fu-Yuan Jin, Osbert Cheng, Yun-Hsuan Lin, Yu-Shan Lin, Cheng Tung Huang, Chien-Yu Lin, Chenhsin Lien, Ting-Chang Chang, Fong-Min Ciou, Jih-Chien Liao, Chien-Hung Yeh
Publikováno v:
IEEE Electron Device Letters. 40:498-501
This letter discusses the hot carrier stress (HCS) degradation mechanisms for different gate voltages ( $\text{V}_{\textsf {G}}$ ) in FinFET devices, and finds the abnormal relationship between HCS degradation and body current under high $\text{V}_{\
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06b5886e407585ab827f17d2869608fb
https://doi.org/10.1109/led.2019.2899630
https://doi.org/10.1109/led.2019.2899630
An Investigation of Anode Hole Injection-Induced Abnormal Body Current in n-Channel HfO2/TiN MOSFETs
Autor:
Yu-Hsuan Chen, Fu-Yuan Jin, Chien-Yu Lin, Yi-Han Ye, Wei-Ren Syong, Hsi-Wen Liu, Cheng Tung Huang, Chenhsin Lien, Ting-Chang Chang, Osbert Cheng, Kai-Chun Chang, Ying-Hsin Lu, Jih-Chien Liao, Li-Hui Chen
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 803-807 (2018)
This paper investigates an anode hole injection (AHI)-induced abnormal body current (abn IB) in n-channel HfO2/TiN MOSFETs. Traditionally, body current is independent of gate voltage during initial electrical characteristic measurements. Nevertheless
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::677fb013903b33f39a5926eca4aeb966
https://doi.org/10.1109/jeds.2018.2850063
https://doi.org/10.1109/jeds.2018.2850063
Autor:
Tseung-Yuen Tseng, Li-Hui Chen, Osbert Cheng, Xi-Wen Liu, Wei-Ting Yen, Yu-Shan Lin, Kuan-Ju Liu, Chenhsin Lien, Ching-En Chen, Ting-Chang Chang, Ying-Hsin Lu, Cheng Tung Huang, Chien-Yu Lin, Jih-Chien Liao
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 17:475-478
This letter investigates the role of the TiN gate’s nitrogen concentration on bulk traps in the HfO2 layer in p-MOSFETs using fast ${I}$ – ${V}$ measurement. During negative bias temperature instability, the holes trapped in the HfO2 layer will i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2095081783f4d39f6aeb7f742bdd116c
https://doi.org/10.1109/tdmr.2017.2672740
https://doi.org/10.1109/tdmr.2017.2672740
Autor:
Wei Ting Yen, Chien-Yu Lin, Kuan Ju Liu, Ching-En Chen, Cheng Tung Huang, Tseung-Yuen Tseng, Osbert Cheng, Szu-Han Ho, Ting-Chang Chang, Xi Wen Liu, Jyun Yu Tsai, Ying Hsin Lu
Publikováno v:
Thin Solid Films. 620:43-47
This study investigates how different metal gate fabrication methods induce variations in the defects which result from nitrogen diffusing into the hafnium oxide layer in metal–oxide–semiconductor field effect transistors (MOSFETs). By using the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf9d77805a4f11c57280faa6e650ec29
https://doi.org/10.1016/j.tsf.2016.09.062
https://doi.org/10.1016/j.tsf.2016.09.062
Autor:
Chien-Yu Lin, Cheng Tung Huang, Ying Hsin Lu, Hsi Wen Liu, Ching-En Chen, Kuan Ju Liu, Jyun Yu Tsai, Ting-Chang Chang, Osbert Cheng, Tseung-Yuen Tseng
Publikováno v:
Thin Solid Films. 620:30-33
This research studies the effects of post-metal deposition annealing temperature on degradation induced by positive bias stress (PBS) in TiN/HfO2 n-channel fin field-effect transistors (FinFETs). The initial electrical characteristics possess higher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ab39a748b390772e1b62abc325535b9
https://doi.org/10.1016/j.tsf.2016.08.072
https://doi.org/10.1016/j.tsf.2016.08.072
Autor:
Chien-Yu Lin, Wei-Ren Syong, Osbert Cheng, Jih-Chien Liao, Ying-Hsin Lu, Yu-Shan Lin, Cheng Tung Huang, Hsi-Wen Liu, Wei-Ting Yen, Chenhsin Lien, Ting-Chang Chang, Fong-Min Ciou
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 17:799-801
This letter investigates the impact of two different TiN capping metal thicknesses on high-k oxygen vacancies in n-MOSFETs. Traditionally, oxygen vacancies in HfO2 can be repaired by nitrogen in the TiN gate, and these repairs become more pronounced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9b3955876dc79e4239911e2ba7d83cd
https://doi.org/10.1109/tdmr.2017.2743759
https://doi.org/10.1109/tdmr.2017.2743759