Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Cheng Lun Hsin"'
Autor:
Ming-Xun Jiang, Sang-Ren Yang, I-Yu Tsao, Bayu Satriya Wardhana, Shih-Feng Hsueh, Jason Shian-Ching Jang, Cheng-Lun Hsin, Sheng-Wei Lee
Publikováno v:
Nanomaterials, Vol 14, Iss 6, p 494 (2024)
This study introduces Sn-substituted higher manganese silicides (MnSi1.75, HMS) synthesized via an arc-melting process followed by spark plasma sintering (SPS). The influences of Sn concentrations on the thermoelectric performance of Mn(Si1−xSnx)1.
Externí odkaz:
https://doaj.org/article/4b89f43f882942918bdac5b5159867bd
Publikováno v:
Materials Research Bulletin. 161:112156
Publikováno v:
IEEE Photonics Technology Letters. 32:174-177
The synergy of photonic and electronic signal transmission in the near-infrared spectrum is an ideal solution for optoelectronic integrated circuits in high-speed communication systems. In this study, we fabricated high-quality germanium mesa on Si b
Publikováno v:
SSRN Electronic Journal.
Porous Mg2(SiSn) thermoelectric composite with ultra-low thermal conductivity in submillimeter scale
Publikováno v:
Applied Physics A. 127
Thermoelectric materials have attracted considerable attention in recent decades due to their thermal energy conversion. Suppression of the thermal conductivity and enhancement of the figure of merit (ZT) can be achieved through porosity and nanoengi
Publikováno v:
Nanotechnology. 33(13)
Thermoelectric materials are considered promising candidates for thermal energy conversion. This study presents the fabrication of Zn- and Ce-alloyed In
Publikováno v:
Applied Surface Science. 494:867-870
In this report, α-In2Se3 single-crystal nanobelts and nanowires were grown in the thermal chemical vapor deposition furnace. The growth direction of the nanobelts was identified by standard microscopy techniques and was along the in-plane direction,
Publikováno v:
Journal of Superconductivity and Novel Magnetism. 32:2289-2293
Autor:
Chin-Hsien Chou, Cheng Lun Hsin
Publikováno v:
IEEE Electron Device Letters. 40:945-948
Herein, we report the formation of buffer-free germanium (Ge) on silicon by a two-step rapid melting growth technique for separate absorption and multiplication (SAM) avalanche photodetectors (APDs) as well as its characteristic measurements. The qua
Publikováno v:
Materials Research Bulletin. 112:61-65
Thermoelectric materials, along with recent advances in nano-engineering, have attracted much attention due to the potential applications in energy conversion. A simple approach to synthesize In2Te3 nanowires was developed in a thermal chemical vapor