Zobrazeno 1 - 10
of 249
pro vyhledávání: '"Cheng Hao Yu"'
Autor:
Kuan-Wen Wu, Cheng-Hao Yu, Tse-Hua Huang, Shiuan-Huei Lu, Yu-Lin Tsai, Ting-Ming Wang, Tung-Wu Lu
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-16 (2023)
Abstract Duchenne muscular dystrophy (DMD) is a genetic disease characterized by progressive muscle weakness with increased neuromechanical challenge and fall risks, especially during obstructed locomotion. This study aimed to identify the kinematic
Externí odkaz:
https://doaj.org/article/d106ce75ab7d4bfda095e242894d10ce
Autor:
Lee, Cheng-Hsien, Cheng, Hao-Yu
Publikováno v:
In Ocean Engineering 15 June 2024 302
Autor:
Lee, Cheng-Hsien, Cheng, Hao-Yu
Publikováno v:
In Coastal Engineering January 2024 187
Autor:
Duh, Yi-Shiou, Nagasaki, Yusuke, Tang, Yu-Lung, Wu, Pang-Han, Cheng, Hao-Yu, Yen, Te-Hsin, Ding, Hou-Xian, Nishida, Kentaro, Hotta, Ikuto, Yang, Jhen-Hong, Lo, Yu- Ping, Chen, Kuo-Ping, Fujita, Katsumasa, Chang, Chih-Wei, Lin, Kung-Hsuan, Takahara, Junichi, Chu, Shi-Wei
Silicon photonics has attracted significant interest in recent years due to its potential in integrated photonics components (1,2) as well as all-dielectric meta-optics elements.(3) Strong photon-photon interactions, aka optical nonlinearity, realize
Externí odkaz:
http://arxiv.org/abs/2001.08421
Autor:
Cheng-Hao Yu, Chih-Ching Yeh, Yi-Fu Lu, Yi-Ling Lu, Ting-Ming Wang, Frank Yeong-Sung Lin, Tung-Wu Lu
Publikováno v:
Sensors, Vol 23, Iss 22, p 9040 (2023)
Monitoring dynamic balance during gait is critical for fall prevention in the elderly. The current study aimed to develop recurrent neural network models for extracting balance variables from a single inertial measurement unit (IMU) placed on the sac
Externí odkaz:
https://doaj.org/article/b059b6f04b594ac4a219b5efde7aa385
Autor:
Gupta, Akash, Thakur, Mukesh Kumar, Effendi, Tirta Amerta, Chen, Ruei-San, Cheng, Hao-Yu, Lin, Kung-Hsuan, Bouras, Mohammed, Tomar, Digvijay Singh, Kuo, Hsin Yu, Chattopadhyay, Surojit
Publikováno v:
In Chemical Engineering Journal 15 September 2021 420 Part 2
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1084-1092 (2021)
In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) device
Externí odkaz:
https://doaj.org/article/d58c3b11aeab4b3eb825d025f9b2842b
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1010-1015 (2020)
In this work, an improved 4H-SiC insulated gate bipolar transistor (IGBT), or CTH-IGBT, with a trench p-polySi/p-SiC heterojunction on the backside of the device is proposed to reduce the turn-off energy loss (Eoff) and turn-off time (Toff). The elec
Externí odkaz:
https://doaj.org/article/430792c9d5a04dc0bbf1b253e659f083
Autor:
Gupta, Akash, Cheng, Hao-Yu, Lin, Kung-Hsuan, Wu, Chien Ting, Roy, Pradip Kumar, Ghosh, Sandip, Chattopadhyay, Surojit
Publikováno v:
In Materials Science & Engineering C September 2019 102:569-577
Publikováno v:
In Superlattices and Microstructures October 2018 122:165-170