Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Cheng Bai Xu"'
Autor:
Xisen Hou, Cong Liu, Huiying Liu, Yusuke Matsuda, Mingqi Li, Yang Song, Janet Wu, Cheng Bai Xu, Emad Aqad, Jong Park, Huan He, Paul Baranowski
Publikováno v:
Advances in Patterning Materials and Processes XXXVII.
Further increasing integrated circuit storage capacities while reducing the cost has led to the development of stacked 3D structures for NAND application. The 3D NAND structures can be enabled by using KrF photoresist coated at high thickness, and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd15a1907ba3ff7a038c50d214675620
https://doi.org/10.1117/12.2552140
https://doi.org/10.1117/12.2552140
Publikováno v:
Advances in Patterning Materials and Processes XXXVI.
Underpinning the Electronic Revolution over the last 50 years is the development of sophisticated patterning materials which have enabled the elegant semiconductor chip design. Of central importance is the photoresist material which has been custom d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90b85695b78efd41ac612386956beb9c
https://doi.org/10.1117/12.2515895
https://doi.org/10.1117/12.2515895
Publikováno v:
Journal of Photopolymer Science and Technology. 29:753-760
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::587a771489de0313330c39593eb52e98
https://doi.org/10.2494/photopolymer.29.753
https://doi.org/10.2494/photopolymer.29.753
Autor:
Kevin Rowell, Irvinder Kaur, Cong Liu, Cheng Bai Xu, Xisen Hou, Mingqi Li, Paul Baranowski, Jong Keun Park
Publikováno v:
Advances in Patterning Materials and Processes XXXV.
In the semiconductor manufacturing industry, photoresist materials are used for transferring an image to one or more underlying layers. To increase the integration density of semiconductor devices and reduce cost of ownership, continuous development
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::482fb8d58cc1ce243972de9b40df2f15
https://doi.org/10.1117/12.2307674
https://doi.org/10.1117/12.2307674
Publikováno v:
Proceedings of SPIE; 1/23/2019, Vol. 10960, p1-19, 19p
Autor:
Kevin Rowell, Mingqi Li, Kwang-Hwyi Im, Charlotte Cutler, Cong Liu, Patricia Fallon, Tom Estelle, Hae-Mi Jeong, Gerd Pohlers, Lori Anne Joesten, Irvinder Kaur, Peter Trefonas, Hyun K. Jeon, Wanyi Huang, Paul Baranowski, Wenyan Yin, Cheng Bai Xu, JoAnne Leonard
Publikováno v:
SPIE Proceedings.
As the critical dimension of devices is approaching the resolution limit of 193nm photo lithography, multiple patterning processes have been developed to print smaller CD and pitch. Multiple patterning and other advanced lithographic processes often
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1e6057a784a9ed8cf05ce3d6e182d87
https://doi.org/10.1117/12.2219688
https://doi.org/10.1117/12.2219688
Autor:
Cecily Audes, Deyan Wang, George G. Barclay, Peter Trefonas, Kap-Soo Cheon, Stefan J. Caporale, Cheng Bai Xu
Publikováno v:
Journal of Photopolymer Science and Technology. 20:687-696
In immersion lithography the optical path between the lens element and the photoresist is currently water. Defects have been identified as a major roadblock for the introduction of immersion lithography to real device manufacturing. To address these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::903f42f9618895b71c7403e2d82a00bc
https://doi.org/10.2494/photopolymer.20.687
https://doi.org/10.2494/photopolymer.20.687
Autor:
Lian Cong Liu, Wen-Liang Huang, Hae Jin Lim, Hyun K. Jeon, Cheng Bai Xu, Jeff Lin, Yeh-Sheng Lin, I-Yuan Wan, Yasuhiro Suzuki, Ray Hsu, Chien Wen Kuo, Tsung Ju Yeh, Chun Chi Yu, Kwang-Hwyi Im, Yu Chin Huang, Chia Hung Lin
Publikováno v:
Advances in Patterning Materials and Processes XXXII.
In this paper, we summarize our development efforts for a top-coatless 193nm immersion positive tone development (PTD) contact hole (C/H) resist with improved litho and defect performances for logic application specifically with an advance node. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3f3fa47f59d411159de81b3d06bfcb8
https://doi.org/10.1117/12.2086348
https://doi.org/10.1117/12.2086348
Autor:
Xisen Hou, Cong Liu, Rowell, Kevin, Kaur, Irvinder, Mingqi Li, Baranowski, Paul, Jong Park, Cheng Bai Xu
Publikováno v:
Proceedings of SPIE; 1/14/2018, Vol. 10586, p1-7, 7p
Publikováno v:
The Journal of Adhesion. 67:195-215
Interfacial interactions of several commercial perfluoropolyether (PFPE) and aromaticmodified lubricants with silicon oxide or carbon substrates were investigated through contact angle measurement, dipping tests, fluorescence spectroscopy and contact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eac0c499b5acc142e50c50f9f2cccff6
https://doi.org/10.1080/00218469808011108
https://doi.org/10.1080/00218469808011108