Zobrazeno 1 - 10
of 118
pro vyhledávání: '"Cheng, Ming-C."'
A thermal simulation methodology derived from the proper orthogonal decomposition (POD) and the Galerkin projection (GP), hereafter referred to as PODTherm-GP, is evaluated in terms of its efficiency and accuracy in a multi-core CPU. The GP projects
Externí odkaz:
http://arxiv.org/abs/2305.01911
Autor:
Jia, Wangkun, Cheng, Ming-C.
A thermal simulation methodology is developed for interconnects enabled by a data-driven learning algorithm accounting for variations of material properties, heat sources and boundary conditions (BCs). The methodology is based on the concepts of mode
Externí odkaz:
http://arxiv.org/abs/2112.03023
Publikováno v:
In Integration July 2024 97
Autor:
Cheng, Ming-C.
A previously developed quantum reduced-order model is revised and applied, together with the domain decomposition, to develop the quantum element method (QEM), a methodology for fast and accurate simulation of quantum eigenvalue problems. The concept
Externí odkaz:
http://arxiv.org/abs/2003.00879
Akademický článek
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Publikováno v:
Journal of Applied Physics 96, 4319-4325 (2004)
We develop a Monte Carlo model to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a non-magnetic low-dimensional semiconductor structure. Both mechanisms of thermionic emission and tunnel
Externí odkaz:
http://arxiv.org/abs/cond-mat/0405270
Publikováno v:
Mathematics and Computers in Simulation 65, 351-363 (2004)
A method for Monte Carlo simulation of 2D spin-polarized electron transport in III-V semiconductor heterojunction FETs is presented. In the simulation, the dynamics of the electrons in coordinate and momentum space is treated semiclassically. The den
Externí odkaz:
http://arxiv.org/abs/cond-mat/0309118
Publikováno v:
Lect. Notes Computer Sci. 2668-II, 881-991 (2003)
Monte Carlo simulations are performed to study the in-plane transport of spin-polarized electrons in III-V semiconductor quantum wells. The density matrix description of the spin polarization is incorporated in the simulation algorithm. The spin-orbi
Externí odkaz:
http://arxiv.org/abs/cond-mat/0302395
Publikováno v:
J. Appl. Phys. 94, 1769-1775 (2003)
We study the in-plane transport of spin-polarized electrons in III-V semiconductor quantum wells. The spin dynamics is controlled by the spin-orbit interaction, which arises via the Dresselhaus (bulk asymmetry) and Rashba (well asymmetry) mechanisms.
Externí odkaz:
http://arxiv.org/abs/cond-mat/0212610
Akademický článek
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