Zobrazeno 1 - 10
of 133
pro vyhledávání: '"Cheng, Mark Ming‐Cheng"'
Autor:
Chamlagain, Bhim, Cui, Qingsong, Paudel, Sagar, Cheng, Mark Ming-Cheng, Chen, Pai-Yen, Zhou, Zhixian
Publikováno v:
2D Mater. 4 (2017) 031002
We report a new approach to integrating high-\k{appa} dielectrics in both bottom- and top-gated MoS2 field-effect transistors (FETs) through thermal oxidation and mechanical assembly of layered twodimensional (2D) TaS2. Combined X-ray photoelectron s
Externí odkaz:
http://arxiv.org/abs/1808.08303
Akademický článek
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Autor:
Chuang, Hsun-Jen, Tan, Xuebin, Ghimire, Nirmal Jeevi, Perera, Meeghage Madusanka, Chamlagain, Bhim, Cheng, Mark Ming-Cheng, Yan, Jiaqiang, Mandrus, David, Tománek, David, Zhou, Zhixian
We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Our transport measurements reveal intrinsic channel properties including
Externí odkaz:
http://arxiv.org/abs/1405.5437
Autor:
Perera, Meeghage Madusanka, Lin, Ming-Wei, Chuang, Hsun-Jen, Chamlagain, Bhim Prasad, Wang, Chongyu, Tan, Xuebin, Cheng, Mark Ming-Cheng, Tománek, David, Zhou, Zhixian
We report the fabrication of ionic liquid (IL) gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility about 60 cm2V-1s-1 at 250 K in ionic liquid gated devices ex
Externí odkaz:
http://arxiv.org/abs/1304.4669
Publikováno v:
In Electrochimica Acta 1 October 2019 319:511-517
Publikováno v:
In Journal of Power Sources 1 August 2019 430:169-174
Autor:
Lin, Ming-Wei, Liu, Lezhang, Lan, Qing, Tan, Xuebin, Dhindsa, Kulwinder, Zeng, Peng, Naik, Vaman M., Cheng, Mark Ming-Cheng, Zhou, Zhixian
We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte consisting of poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as both a contact-barrier reducer and channel m
Externí odkaz:
http://arxiv.org/abs/1207.4824
Autor:
Ling, Cheng, Setzler, Gabriel, Lin, Ming-Wei, Kulwinder, Jin, Jin, Yoon, Hyeun Joong, Kim, Seung Soo, Cheng, Mark Ming-Cheng, Widjaja, Noppi, Zhou, Zhixian
A simple one-stage solution-based method was developed to produce graphene nanoribbons by sonicating graphite powder in organic solutions with polymer surfactant. The graphene nanoribbons were deposited on silicon substrate, and characterized by Rama
Externí odkaz:
http://arxiv.org/abs/1107.0083
Autor:
Lin, Ming-Wei, Ling, Cheng, Agapito, Luis A., Kioussis, Nicholas, Zhang, Yiyang, Cheng, Mark Ming-Cheng, Wang, Wei L., Kaxiras, Efthimios, Zhou, Zhixian
We report electrical transport measurements on a suspended ultra-low-disorder graphene nanoribbon(GNR) with nearly atomically smooth edges that reveal a high mobility exceeding 3000 cm2 V-1 s-1 and an intrinsic band gap. The experimentally derived ba
Externí odkaz:
http://arxiv.org/abs/1105.5672
Autor:
Lin, Ming-Wei, Ling, Cheng, Zhang, Yiyang, Yoon, Hyeun Joong, Cheng, Mark Ming-Cheng, Agapito, Luis A., Kioussis, Nicholas, Widjaja, Noppi, Zhou, Zhixian
We have fabricated suspended few layer (1-3 layers) graphene nanoribbon field effect transistors from unzipped multiwall carbon nanotubes. Electrical transport measurements show that current-annealing effectively removes the impurities on the suspend
Externí odkaz:
http://arxiv.org/abs/1104.1599