Výsledky vyhledávání - "Chenevier, Bernard"

Advances in Superconductivity as a road to meet Energy and Health SDGs: joint Japanese and European research teams may take the lead

Autor: Kiwa, Toshihiko, Yokoya, Takayoshi, Chenevier, Bernard, Cosmo, Valeria Di, Truccato, Marco, Sacks, William, Sauerwein, Wolfgang

Publikováno v: Bulletin of Institute for Education and Student Services, Okayama University. 6:148-165

Based on a statistical analysis of R&D activities in the field of superconductivity (SC) in a broad sense, the paper reports that Japan's leadership is strong over the past 20 years, in terms of researchers publications and patents. It also essential

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=jairo_______::f3236e660bc5ff4e33a08cb9d3842054
https://ousar.lib.okayama-u.ac.jp/63338

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A very promising piezoelectric property of Ta2O5 thin films. I: Monoclinic-trigonal phase transition

Autor: Audier, Marc, Chenevier, Bernard, Roussel, Herve, Vincent, Loïc, Peña, Alexandra, Lintanf-Salaün, Amélie

Publikováno v: Journal of Solid State Chemistry
Journal of Solid State Chemistry, Elsevier, 2011, 184 (8), pp.2023-2032. ⟨10.1016/j.jssc.2011.06.001⟩

International audience; Ceramic thin films of tantalum oxide of a new trigonal structure (a=12.713(7) angstrom, alpha = 28.201(0)degrees, space-group R3) were produced by thermal treatments of amorphous deposits on (001)Si wafers, either by electrost

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ef0ac6c460e0fbbd255df41e2f59abbf
https://hal.archives-ouvertes.fr/hal-00942956

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Work Function Tuning of TixSiyNz Electrodes Using Partial Saturation of Chemisorbing Surface during Pulsing Chemical Vapor Deposition

Autor: Fillot, F., Maitrejean, S., Pierre, F., Chenevier, Bernard

Publikováno v: Electrochemical and Solid-State Letters
Electrochemical and Solid-State Letters, Electrochemical Society, 2009, 12 (7), pp.H272-H274. ⟨10.1149/1.3126495⟩
Electrochemical and Solid-State Letters, 2009, 12 (7), pp.H272-H274. ⟨10.1149/1.3126495⟩

International audience; In this article, the achievement of TixSiyNz metal gates with tunable work function is demonstrated using partial saturation during pulsing chemical vapor deposition. Thin films were deposited on SiO2 using a pulse sequence wi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7974e3d0d74bb448c5c757318506304c
https://hal.archives-ouvertes.fr/hal-01067596

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Annealing of thin Zr films on Si1-xGex (0≤x≤1): X-ray diffraction and Raman studies

Autor: Chaix-Pluchery, Odette, Chenevier, Bernard, Aubry-Fortuna, Valérie, Matko, Igor

Publikováno v: Journal of Physics and Chemistry of Solids
Journal of Physics and Chemistry of Solids, Elsevier, 2002, 63, pp.1889

12 pages; International audience; X-ray diffraction experiments have been combined to Raman scattering and transmission electron microscopy data to analyze the result of rapid thermal annealing applied to Zr films, 16 or 80 nm thick, sputtered on Si1

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::add03a7b91dc6c8d892f06167e6dac24
https://hal.archives-ouvertes.fr/hal-00207762/document

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