Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Chen-Yu Shieh"'
Autor:
Chen-Yu Shieh, 謝鎮宇
103
The epitaxial layer of InGaN-based light-emitting diodes (LEDs) still contain a high defect density (around 108－1010 cm-2) and large strain-induced piezoelectric field due to the large lattice mismatch and the difference in thermal expansi
The epitaxial layer of InGaN-based light-emitting diodes (LEDs) still contain a high defect density (around 108－1010 cm-2) and large strain-induced piezoelectric field due to the large lattice mismatch and the difference in thermal expansi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/02005784314033622653
Autor:
Chen-yu Shieh, 謝鎮宇
96
A procedure is discussing about current blocking in the LED of GaN. And designing geometric patterns of contact electrodes affects light-extraction on total photoelectric factors. By the design begin simulation and analysis. Then this thesis
A procedure is discussing about current blocking in the LED of GaN. And designing geometric patterns of contact electrodes affects light-extraction on total photoelectric factors. By the design begin simulation and analysis. Then this thesis
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/14945168884413837850
Autor:
Chen-Yu Shieh, Chun-Wei Tsai
Publikováno v:
SID Symposium Digest of Technical Papers. 52:344-346
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::321fec89ce9572f1715211ec9493cd31
https://doi.org/10.1002/sdtp.15117
https://doi.org/10.1002/sdtp.15117
Publikováno v:
SID Symposium Digest of Technical Papers. 52:27-28
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6317a065bb2e96d455af8ca898ff7fa0
https://doi.org/10.1002/sdtp.14361
https://doi.org/10.1002/sdtp.14361
Publikováno v:
SID Symposium Digest of Technical Papers. 52:303-304
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1402415f7d39f41b1fdaf3e6f56e7a3e
https://doi.org/10.1002/sdtp.14471
https://doi.org/10.1002/sdtp.14471
Publikováno v:
Materials Chemistry and Physics. 157:63-68
In this work, a buffer layer of nitrided titanium (Ti) achieved through the nitridation of a Ti metal layer on a sapphire substrate was used for the epitaxial growth of InGaN-based light-emitting diodes (LEDs) achieved by low pressure metal-organic c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc75ac988d1cbde00fc61c7e669bbefe
https://doi.org/10.1016/j.matchemphys.2015.03.014
https://doi.org/10.1016/j.matchemphys.2015.03.014
Publikováno v:
Handbook of Advanced Lighting Technology ISBN: 9783319002958
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8ac4e11bee9bc68303fe5d4ab31ca93
https://doi.org/10.1007/978-3-319-00295-8_10-1
https://doi.org/10.1007/978-3-319-00295-8_10-1
Publikováno v:
SPIE Proceedings.
We reported the defects and optical characterizations of the ultraviolet light-emitting diodes grown on free-standing GaN substrate (FS-GaN) and sapphire. Cross-sectional transmission electron microscopy (TEM) images showed that the total defect dens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd1d79b390ecee6384c4e934abe6ee86
https://doi.org/10.1117/12.2039621
https://doi.org/10.1117/12.2039621
Publikováno v:
SPIE Proceedings.
We reported the influence of free-standing (FS) GaN substrate on ultraviolet light-emitting-diodes (UV LEDs) by atmospheric-pressure metal-organic chemical vapor deposition (APMOCVD). The Raman spectrum shows the in-plane compressive stress of the Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0704672347baa896f9bdd98b9e84269f
https://doi.org/10.1117/12.2003673
https://doi.org/10.1117/12.2003673
Autor:
Wei-I Lee, Zhen-Yu Li, J. Y. Chang, Chen Yu Shieh, Gou Chung Chi, Hao-Chung Kuo, Ming Ta Tsai
Publikováno v:
Journal of Nanophotonics. 8:083081
We investigated the influence of free-standing GaN (FS-GaN) substrates on the performance of ultraviolet light-emitting-diodes (UV-LEDs) grown on top by atmospheric pressure metal-organic chemical vapor deposition. High-resolution double-crystal x-ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827b32b046c5a786ab9f87dc237adbb7
https://doi.org/10.1117/1.jnp.8.083081
https://doi.org/10.1117/1.jnp.8.083081