Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Chen-Xi Fei"'
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-4 (2017)
Abstract The capacitance and leakage current properties of multilayer La2O3/Al2O3 dielectric stacks and LaAlO3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La2O3/Al2O3 stacks a
Externí odkaz:
https://doaj.org/article/317114a2d0e344b68d527ab130ec84d0
Autor:
Tian-Ming, Feng, Ming-Cong, Yang, Lan-Lan, Pan, Chen-Xi, Fei, Chao, Wang, Xue-Rong, Xiang, Jun, Sun
Publikováno v:
Shanghai kou qiang yi xue = Shanghai journal of stomatology. 26(4)
To evaluate the effect of low-intensity pulsed ultrasound（LIPUS） combined with triamcinolone acetonide on oral mucosal ulcer in syrian hamster in several ways, including healing time, contents of superoxide dismutase（SOD）and malondialdehyde (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f0905a9ca0e9531ceba4a0fa60f6f997
https://pubmed.ncbi.nlm.nih.gov/29199330
https://pubmed.ncbi.nlm.nih.gov/29199330
Publikováno v:
Nanoscale Research Letters
We investigated the effects of different annealing ambients on the physical and electrical properties of LaAlO3 films grown by atomic layer deposition. Post-grown rapid thermal annealing (RTA) was carried out at 600 °C for 1 min in vacuum, N2, and O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::ff3a8765c3cce9064da10f3f1d0288e6
https://pubmed.ncbi.nlm.nih.gov/28209030
https://pubmed.ncbi.nlm.nih.gov/28209030
Publikováno v:
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.
The off-state leakage current characteristics of nano-scaled MOSFETs with high-k gate dielectric are thoroughly investigated. The off-state leakage current can be divided into three components and the influences of fringing induced barrier lowering (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbb66e4f5e5ff31039c3e4a1e821b49c
https://doi.org/10.1109/icsict.2012.6467944
https://doi.org/10.1109/icsict.2012.6467944
Publikováno v:
Chinese Physics B; May2016, Vol. 25 Issue 5, p1-1, 1p