Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Chen-Shuo Huang"'
Autor:
Chen-Shuo Huang, 黃震鑠
93
With the suggestion of SoP to reduce cost and create additional value, the memory which is fabricated on glass substrate is essential for peripheral driver ICs application. We have found and studied a simple twins poly-Si TFTs EEPROM’s to s
With the suggestion of SoP to reduce cost and create additional value, the memory which is fabricated on glass substrate is essential for peripheral driver ICs application. We have found and studied a simple twins poly-Si TFTs EEPROM’s to s
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/69476004541115860739
Autor:
Ya-Ting Chien, Kuan-Ju Zhou, Mao-Chou Tai, Yu-An Chen, Pei-Jun Sun, Ya-Huan Lee, Ting-Chang Chang, Tsung-Ming Tsai, Yang-Shun Fan, Chen-Shuo Huang, Kuo-Kuang Chen, Chih-Hung Tsai
Publikováno v:
IEEE Transactions on Electron Devices. 70:1089-1094
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47e9fec6a491fdf20a8d5d89fdc94949
https://doi.org/10.1109/ted.2023.3237506
https://doi.org/10.1109/ted.2023.3237506
Autor:
Kuan-Ju Zhou, Ting-Chang Chang, Mao-Chou Tai, Yu-An Chen, Ya-Ting Chien, Pei-Jun Sun, Po-Yu Yen, Simon M. Sze, Yang-Shun Fan, Chen-Shuo Huang, Kuo-Kuang Chen, Chih-Hung Tsai
Publikováno v:
ACS Applied Electronic Materials. 5:1183-1188
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bde9fadc6a1766a4c108283cb4b1dd4
https://doi.org/10.1021/acsaelm.2c01629
https://doi.org/10.1021/acsaelm.2c01629
Autor:
Ko-Ruey Jen, Yi-Chien Chen, Yu-Ching Chang, Yang-Shun Fan, Chen-Shuo Huang, Ying-Hsuan Tang, Chia-Wei Chiang, Po-Jui Huang, Kai-Chuin Lim, Chih-Cheng Chen, Yung-Chih Chen, Kuo-Kuang Chen
Publikováno v:
SID Symposium Digest of Technical Papers. 53:1137-1140
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8f86b06627540a94aee32ea41a3f856
https://doi.org/10.1002/sdtp.15702
https://doi.org/10.1002/sdtp.15702
Autor:
Bo Wei Chen, Yu-Ju Hung, Chen Shuo Huang, Yu-Hsin Lin, Wei-Chih Lai, Hsueh Hsing Lu, Ting-Chang Chang, Kai Chung Cheng, Guan Fu Chen, Kuo Jui Chang, Kuo Kuang Chen, Hong Chih Chen
Publikováno v:
ACS Applied Materials & Interfaces. 10:25866-25870
This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4caa2ca4ed574bbe6162428e4ef5a984
https://doi.org/10.1021/acsami.7b16307
https://doi.org/10.1021/acsami.7b16307
Autor:
Hua-Mao Chen, Ya-Hsiang Tai, Cheng-Ya Li, Ting-Chang Chang, Yu-Ju Hung, Guan-Fu Chen, Kuo-Kuang Chen, Chang Kuo-Jui, Bo-Wei Chen, Yu-Hsin Lin, Chen-Shuo Huang, Kai Chung Cheng, Hsueh-Hsing Lu, Hong-Chih Chen
Publikováno v:
IEEE Electron Device Letters. 38:334-337
This letter investigates effects of different channel dimensions in top-gate a-InGaZnO4 thin-film transistors with SiNx interlayer dielectric. In narrow channel devices, hydrogen atoms in the SiNx layer diffuse into the entire active layer, inducing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf44adcb3467b0d68977fb46444621b4
https://doi.org/10.1109/led.2017.2657546
https://doi.org/10.1109/led.2017.2657546
Autor:
Chia-Hsun Tu, Keh-Long Hwu, Ji-Feng Chen, Yu-Hsin Lin, Lee-Hsun Chang, Hsueh-Hsing Lu, Ming-Chang Hsu, Chen-Shuo Huang, Po-Yang Lin
Publikováno v:
SID Symposium Digest of Technical Papers. 46:1047-1050
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::115e145c43752a76e146f6c48cfe3aa9
https://doi.org/10.1002/sdtp.10383
https://doi.org/10.1002/sdtp.10383
Autor:
Chan-Jui Liu, Ching-Sang Chuang, Chih-Hung Tsai, Meng-Ting Lee, Yu-Hsin Lin, Pin-Fang Wang, Hsueh-Hsing Lu, Chia-Hsun Tu, Chen-Shuo Huang, Po-Yang Lin, Tsung-Ying Ke, Yu-Ling Lin, Keh-Long Hwu
Publikováno v:
SID Symposium Digest of Technical Papers. 45:114-117
A highly reliable ultra-high gas barrier (UGB) was developed and applied on the fabrication of 4.3-inch flexible AMOLED. The water vapor transmission rate of the UGB on flexible substrate could achieve ∼ 10−6 g/m2-day under a calcium test (60°C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8967ccaf66ea91b7f216919933d73e7b
https://doi.org/10.1002/j.2168-0159.2014.tb00032.x
https://doi.org/10.1002/j.2168-0159.2014.tb00032.x
Autor:
Ching-Sang Chuang, Po-Yang Lin, Chen-Shuo Huang, Keh-Long Hwu, Chia-Hsun Tu, Yu-Hsin Lin, Ji-Feng Chen
Publikováno v:
SID Symposium Digest of Technical Papers. 45:126-129
A sensory system able to measure the geometric profile of a flexible display is proposed. The sensory system is embedded within the flexible display and manufactured by the thin-film transistor process. The sensory system provides an alternative user
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18f88d5f3b112541ebccbfb15e92e4a9
https://doi.org/10.1002/j.2168-0159.2014.tb00035.x
https://doi.org/10.1002/j.2168-0159.2014.tb00035.x
Autor:
Chi-Chun Chen, Yuh-Jier Mii, Peng-Soon Lim, Po-Tsun Liu, Chen-Shuo Huang, Da-Yuan Lee, Hun-Jan Tao, Shueh-Wen Tsao
Publikováno v:
IEEE Electron Device Letters. 29:1249-1251
Anomalously high gate tunneling current, induced by high-tensile-stress memorization technique, is reported in this letter. Carrier-separation measurement method shows that the increased gate tunneling current is originated from the higher gate-to-so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aebf5db5981c5c8117d45e3ac125990f
https://doi.org/10.1109/led.2008.2005518
https://doi.org/10.1109/led.2008.2005518