Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Chen-Kai Kao"'
Autor:
Chen-Kai Kao, 高振凱
106
The integrated circuit (IC hereafter) design industry has been booming in China over the last decade while Taiwan gains its current position by keeping efforts for the past 40 years. China’s IC design industry grows with various advantages
The integrated circuit (IC hereafter) design industry has been booming in China over the last decade while Taiwan gains its current position by keeping efforts for the past 40 years. China’s IC design industry grows with various advantages
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/j2f7v8
Autor:
Chen-Kai Kao, 高振凱
99
Image compression technology has long been an important part in image processing, since uncompressed image files usually take up huge amount of storage space and are very time-consuming to transfer through networks. The arc-based fractal codi
Image compression technology has long been an important part in image processing, since uncompressed image files usually take up huge amount of storage space and are very time-consuming to transfer through networks. The arc-based fractal codi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/50664459886987342784
Autor:
Chen-Kai Kao, 高振凱
97
This research is to improve the imperfection of Dye-sensitized solar cells (DSSC), which the liquid electrolyte easily leaked out form the component of cell, and raising the long-term stability of the application in DSSC. For the working elec
This research is to improve the imperfection of Dye-sensitized solar cells (DSSC), which the liquid electrolyte easily leaked out form the component of cell, and raising the long-term stability of the application in DSSC. For the working elec
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/vhe4zn
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:S3048-S3051
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a8a5592cca9d87b7218d856e57c920a
https://doi.org/10.1149/2.0121711jss
https://doi.org/10.1149/2.0121711jss
Publikováno v:
physica status solidi c. 13:195-199
In this paper we report on the growth mode by plasmaassisted MBE of nitride films on nano-patterned sapphire substrates. Such substrates were fabricated using nano-sphere and nano-imprint lithographies, which led to cone-and cylinder-shaped patterns
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c43524492651d209f8a87cd0294a4d65
https://doi.org/10.1002/pssc.201510212
https://doi.org/10.1002/pssc.201510212
Autor:
Anirban Bhattacharyya, Roberto Paiella, Christos Thomidis, Adam Moldawer, Chen-kai Kao, Theodore D. Moustakas
Publikováno v:
physica status solidi c. 9:770-773
In this paper we present studies and compare the performance of UV electroabsorption modulators based on bulk GaN films and GaN/AlGaN multiple quantum wells. In both types of devices, the absorption edge at room temperature is dominated by excitonic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::285998e05d8893b51cbd1999ebe3941c
https://doi.org/10.1002/pssc.201100437
https://doi.org/10.1002/pssc.201100437
Autor:
Theodore D. Moustakas, Jeffrey M. Woodward, Christos Thomidis, Yitao Liao, Dipesh Bhattarai, Adam Moldawer, Chen-kai Kao
Publikováno v:
physica status solidi c. 9:798-801
We report the development of efficient AlGaN-based deep ultraviolet (UV) LEDs emitting in the wavelength range from 320 nm to 265 nm by plasma-assisted molecular beam epitaxy (MBE). By growing the AlGaN well layers under Ga-rich conditions to produce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f754d909101c820cafa3baf44f949e1
https://doi.org/10.1002/pssc.201100438
https://doi.org/10.1002/pssc.201100438
Autor:
J. Abell, Lin Zhou, Theodore D. Moustakas, A. Yu. Nikiforov, Chen-kai Kao, Emmanouil Dimakis, Christos Thomidis, David J. Smith
Publikováno v:
physica status solidi (a). 205:1070-1073
Near-ultraviolet light emitting diodes (LEDs), based on one monolayer thick InN/GaN multiple quantum wells, were grown by radio-frequency plasma-assisted molecular beam epitaxy. The active region was grown at 685 °C, a temperature where the growth o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14e2e4f8fd1701a57c791a1f6142eda5
https://doi.org/10.1002/pssa.200778742
https://doi.org/10.1002/pssa.200778742
Publikováno v:
MRS Proceedings. 1736
Metal organic chemical vapor deposition, as well as material and basic device properties of nitride-based high electron mobility transistor structures on (111) silicon substrates varying in diameter from 4 to 8 inch were studied using in-situ and ex-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9208d8b517a01e299192d4d6ea61c76c
https://doi.org/10.1557/opl.2015.100
https://doi.org/10.1557/opl.2015.100
Autor:
Wei Zhang, Enrico Bellotti, Chen-kai Kao, Adam Moldawer, Christos Thomidis, Yi-chung Chang, Yitao Liao, A. Yu. Nikiforov, Theodore D. Moustakas
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 4:49-51
We report the development of AlGaN-based deep ultraviolet LEDs by plasma-assisted molecular beam epitaxy. The devices were evaluated under bare-die configuration, placed outside an integrated sphere, and were found to have optical power of 1.3 mW and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1e5a464e5e2d757babe31ded09de05e
https://doi.org/10.1002/pssr.200903400
https://doi.org/10.1002/pssr.200903400