Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Chen-Han Chou"'
Publikováno v:
Plastic and Reconstructive Surgery, Global Open, Vol 12, Iss 6, p e5872 (2024)
Background:. Head and neck lymphedema (HNL), including external and internal types, could be a possible consequence for patients who have received neck dissection and radiotherapy for head and neck cancer. Initially, the common presentations are heav
Externí odkaz:
https://doaj.org/article/c84fa3586c8d4052ba02861aefd4ea45
Autor:
Meng-Jey Youh, Yu-Ren Huang, Cheng-Hsiung Peng, Ming-Hsien Lin, Ting-Yu Chen, Chun-Yu Chen, Yih-Ming Liu, Nen-Wen Pu, Bo-Yi Liu, Chen-Han Chou, Kai-Hsiang Hou, Ming-Der Ger
Publikováno v:
Nanomaterials, Vol 11, Iss 6, p 1603 (2021)
Corrosion prevention and infrared (IR) stealth are conflicting goals. While graphene nanosheets (GN) provide an excellent physical barrier against corrosive agent diffusion, thus lowering the permeability of anti-corrosion coatings, they have the sid
Externí odkaz:
https://doaj.org/article/2febdd081b7e4e62b27471984ece8ca6
Autor:
Chi-Maw Lin, Cheng-Ping Wang, Chun-Nan Chen, Che-Yi Lin, Ting-Yi Li, Chen-Han Chou, Ya-Ching Hsu, Po-Yen Kuo, Tsung-Lin Yang, Pei-Jen Lou, Jenq-Yuh Ko, Tseng-Cheng Chen
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract Early detection of neck lymph node (LN) recurrence is paramount in improving the prognosis of treated head and neck cancer patients. Ultrasound (US) with US-guided fine needle aspiration (FNA) and core needle biopsy (CNB) have been shown to
Externí odkaz:
https://doaj.org/article/da57a6ebf1594a4db93a581dbf375c57
Publikováno v:
Journal of Medical Ultrasound, Vol 22, Iss 3, Pp 158-163 (2014)
Making an accurate diagnosis of tuberculous cervical lymphadenitis (TCL) has been a problem to clinicians because it is a versatile masquerader and is often confused with lymphomas or cervical metastases. Ultrasound (US) has advantages over other exa
Externí odkaz:
https://doaj.org/article/2177c6dbbe084ced8d7ac8b76c82f6b2
Publikováno v:
PLoS ONE, Vol 8, Iss 10, p e78666 (2013)
OBJECTIVE:To investigate the contributions of adenoid and tonsil size to childhood obstructive sleep apnea (OSA) and the interactions between adenotonsillar hypertrophy, age, and obesity in children with OSA. METHODS:In total, 495 symptomatic patient
Externí odkaz:
https://doaj.org/article/a20a16f4727f4518a3fd36534e5a7f81
Autor:
Hsin-Hui Huang, Chen-Yi Cho, Tzu-Yao Lin, Tz-Shiuan Huang, Ming-Hung Wu, I-Ting Wang, Yu-Kai Chang, Chen-Han Chou, Pei-Jean Liao, Hsin-Yun Yang, Yu-De Lin, Po-Chun Yeh, Shyh-Shyuan Sheu, Tuo-Hung Hou
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Autor:
Hung-Li Chiang, Jui-Jen Wu, Chen-Han Chou, Yen-Fu Hsiao, Yi-Chun Chen, Leo Liu, Jer-Fu Wang, Tzu-Chiang Chen, Pei-Jun Liao, Jin Cai, Xinyu Bao, Alan Cheng, Meng-Fan Chang
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Autor:
Chen-Han Chou, Wen-Kuan Yeh, Yi-He Tsai, Chao-Hsin Chien, Fu-Hsiang Ko, Yu-Hsien Lin, Hui-Hsuan Li
Publikováno v:
Journal of Nanoscience and Nanotechnology. 19:4529-4534
A high-quality HfGeOx interfacial layer (IL) was formed in a HfO₂/Al₂O₃/HfO₂/GeOx gate stack through thermal annealing. The diffusing of GeO into the HfO₂ layer led to the mixing of the GeOx and HfO₂ layers, as identified through energy-d
Autor:
Chao-Hsin Chien, Wei-Chen Chueh, Chen-Han Chou, Shih-Yun Wang, Terry Y.T. Hung, Yun-Yan Chung, Shin-Yuan Wang, Wen-Hao Chang, Lain-Jong Li, Bo-Kai Kang, Chao-Ching Cheng
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We propose a novel triple-gated single transistor comprising monolayer MoS 2 channel to accomplish basic logic-gate functions. The NAND and NOR computing are compatible in the same MoS 2 n-FET and switchable easily through top-gate bias setting (V LO
Autor:
Hsien-Ho Liu, Jun-Lin Zhang, Cheng-Yu Yu, Chao-Hsin Chien, Chen-Han Chou, Meng-Chien Lee, S.P. Wang, Guang-Li Luo, Wei-Li Lee, Hung-Ju Lin
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
In this paper, we fabricated TiN/HfO 2 -based gate stacks on epi- Si 0.5 Ge 0.5 substrates with remarkably low interface trap density (Dit) by optimizing the temperature and pressure in the annealing ambient. We found that oxygen in ambient play a su