Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Chen-Guan Lee"'
Publikováno v:
SID Symposium Digest of Technical Papers. 46:861-864
We describe the device and transport characteristics of amorphous zinc tin oxide thin-film (ZTO) transistors. In samples with a sufficiently high mobility and at a high gate voltage, a crossover occurs from transport governed by thermal excitation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c74317ce445467379e6cf4839443b8a
https://doi.org/10.1002/sdtp.10367
https://doi.org/10.1002/sdtp.10367
Autor:
Ananth Dodabalapur, Chen-Guan Lee
Publikováno v:
Journal of Electronic Materials. 41:895-898
We report a sol–gel method to deposit a high-k dielectric, zirconium oxide (ZrO2). This solution-based approach has advantages of easy processing and low fabrication cost. Effects of annealing temperatures on dielectric properties, such as tunnelin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cafae7d1c20f7f62af249bf5c536766
https://doi.org/10.1007/s11664-012-1905-0
https://doi.org/10.1007/s11664-012-1905-0
Autor:
J. Lee, P. Bai, T. Leo, S. K.-Y. Shi, P. Vandervoorn, D. Ingerly, L. Rockford, Ramaswamy Rahul, Y.-W. Chen, Nidhi Nidhi, F. Al-Amoody, M. Jang, K. Byon, T. Rana, Curtis Tsai, A. Zainuddin, C. Quincy, Eric Karl, L. Yang, Hafez Walid M, Chetan Prasad, C. Petersburg, Olac-Vaw Roman W, K. Komeyli, A. Kumar, Chang Hsu-Yu, Anand Subramaniam, N. L. Dias, Tsung-Yuan Chang, H. Kilambi, K. Phoa, Pei-Chi Liu, Chen-Guan Lee, C.-H. Jan
Publikováno v:
VLSIC
A leading edge 14 nm SoC platform technology based upon the 2nd generation Tri-Gate transistor technology [5] has been optimized for density, low power and wide dynamic range. 70 nm gate pitch, 52 nm metal pitch and 0.0499 um2 HDC SRAM cells are the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ad023e07edda7779db811903bcb46fb
https://doi.org/10.1109/vlsic.2015.7231380
https://doi.org/10.1109/vlsic.2015.7231380
Publikováno v:
IEEE Electron Device Letters. 31:1410-1412
We demonstrate solution-processed zinc tin oxide thin-film transistors (TFTs) with a patterned-gate configuration. High-k and solution-processed zirconium oxide (ZrO2) was employed to lower down the operating voltage. Devices with recessed and nonrec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::472cb138fe5d99cc5733bb14130bf95f
https://doi.org/10.1109/led.2010.2081659
https://doi.org/10.1109/led.2010.2081659
Publikováno v:
69th Device Research Conference.
Amorphous oxide semiconductors (AOS) have been extensively studied for circuit applications, such as inverters [1], oscillators [2], and memory devices [3]. Most of the AOS-based TFTs used in the circuits are processed with high-vacuum systems even t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a603da5f4cea76934f8ddce266593e1b
https://doi.org/10.1109/drc.2011.5994517
https://doi.org/10.1109/drc.2011.5994517
Autor:
Ananth Dodabalapur, Chen-Guan Lee
Publikováno v:
68th Device Research Conference.
Amorphous metal-oxide semiconductors have attracted a significant amount of attention in the past few years because of their high mobility, stability in ambient air and potential to be processed by solution approaches. Performance uniformity througho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f89155aec44983915f93678d1ad3a869
https://doi.org/10.1109/drc.2010.5551871
https://doi.org/10.1109/drc.2010.5551871
Publikováno v:
MRS Proceedings. 1247
We demonstrate high performance zinc-tin oxide (ZTO) thin-film transistors (TFTs) with low operation voltage, small channel length and low parasitic capacitance. Both the zinc tin oxide and the high-k dielectric, ZrO2, were solution processed by sol-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c50c1e56c4ac13e9df58567f25f4acce
https://doi.org/10.1557/proc-1247-c06-02
https://doi.org/10.1557/proc-1247-c06-02
Publikováno v:
Applied Physics Letters. 98:092106
The measurement of the distribution of charge carrier velocities in a field-effect transistor can provide considerable insight into charge transport mechanisms and structure-property relationships. We have developed such a method and have applied it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d194f6298d58ec5d0a1918ad1cfc2f46
https://doi.org/10.1063/1.3558910
https://doi.org/10.1063/1.3558910
Publikováno v:
Applied Physics Letters. 97:203505
We report on charge transport phenomena in high-mobility solution-deposited amorphous zinc-tin oxide based thin-film transistors. At low carrier concentrations, the dominant transport mechanism is multiple trap and release, with the activation energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc807814df2ef756d3be513ac8b9c63d
https://doi.org/10.1063/1.3517502
https://doi.org/10.1063/1.3517502
Autor:
Chen-Guan Lee, Ananth Dodabalapur
Publikováno v:
Applied Physics Letters. 96:243501
Solution-processed amorphous oxide semiconductors are attractive channel materials in thin-film transistors (TFTs) for low-cost electronics. We demonstrate improved performance and uniformity of solution-processed zinc–tin oxide (ZTO) TFTs by optim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fe2716f9156f51ca5f4eaa224128446
https://doi.org/10.1063/1.3454241
https://doi.org/10.1063/1.3454241