Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Chen-Chia Fan"'
Publikováno v:
Games, Vol 14, Iss 2, p 29 (2023)
This paper considers the collusive stability of downstream competition in a vertical market with network externalities and cost asymmetry. A dynamic collusion game is constructed, and backward induction is employed to solve the subgame perfect Nash e
Externí odkaz:
https://doaj.org/article/21e792e8d36f47faa3d1c55675178b0b
Autor:
Chen-Chia Fan, 范振嘉
102
The promising use of non-overlapped implantation (NOI) nMOSFETs as non-volatile memory (NVM) devices has received considerable interest owing to their simple structure and compatibility with logic CMOS processing. In NOI nMOSFETs, the charge
The promising use of non-overlapped implantation (NOI) nMOSFETs as non-volatile memory (NVM) devices has received considerable interest owing to their simple structure and compatibility with logic CMOS processing. In NOI nMOSFETs, the charge
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/70595001076149737399
Autor:
Chen-Chia Fan, 范振家
103
For a long time, the layout of the news media, youth Kaohsiung dangerous driving (racing) reported rampant, has become a major stumbling block to the municipal public satisfaction and security caused worries on. In 2010 and the end of 2014 h
For a long time, the layout of the news media, youth Kaohsiung dangerous driving (racing) reported rampant, has become a major stumbling block to the municipal public satisfaction and security caused worries on. In 2010 and the end of 2014 h
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/36845481166881022313
Autor:
Chen-Chia Fan, 范振家
94
The leading position of Taiwan vegetarian business in the global industry is due to its advanced technology capability in manufacturing high quality vegetarian products. Company S has successfully entered the marketed with innovation and sust
The leading position of Taiwan vegetarian business in the global industry is due to its advanced technology capability in manufacturing high quality vegetarian products. Company S has successfully entered the marketed with innovation and sust
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/48002831943933009443
We describe the first case of fingolimod-associated bilateral cystoid macular oedema (CMO) following uncomplicated cataract surgery. A 57-year-old woman has been on fingolimod for the past 2 years for the treatment of relapsing–remitting multiple s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68963223c19f8817e414a9d2f9476619
https://europepmc.org/articles/PMC4434361/
https://europepmc.org/articles/PMC4434361/
Autor:
Chen-Chia Fan, Kun-Ming Lin, Wu-Ching Chou, E.S. Jeng, Pai-Chun Kuo, Hui-Chun Hsu, Chien-Sheng Hsieh
Publikováno v:
IEEE Transactions on Electron Devices. 53:2517-2524
Novel gate-to-drain nonoverlapped-implantation (NOI) nMOSFETs have been developed as potential multibit-per-cell nonvolatile-memory (NVM) devices. The lateral charge distribution of the NOI NVM device programmed by channel hot electron injection is i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1e7159b8a7be25d24f70691ad07dfba
https://doi.org/10.1109/ted.2006.882044
https://doi.org/10.1109/ted.2006.882044
Autor:
Chih-Hsueh Hon, Pai-Chu Kao, Chen-Chia Fan, Wei-Chain Kung, Zih-Wun Wang, Chia-Sung Chiu, Chien-Sheng Hsieh, E.S. Jeng
Publikováno v:
IEEE Transactions on Electron Devices. 51:1811-1817
This work presents the characteristics of a two-bit-per-cell charge-trapping nonvolatile memory (NVM) device by using gate-to-drain nonoverlapped implanted (NOI) n-MOSFETs. Hot carriers are generated in NOI devices and injected into the silicon nitri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63dc5bc82bfb110ebc0ae21af13fcab4
https://doi.org/10.1109/ted.2004.836796
https://doi.org/10.1109/ted.2004.836796
Autor:
Chen-Chia Fan, Erik S. Jeng, Hong-Xiu Chen, Wei-Jun Tung, Kuang-Hao Chiang, Shang-Wei Chou, Kang-Ming Peng
Publikováno v:
Japanese Journal of Applied Physics. 53:096502
The promising use of non-overlapped implantation (NOI) n-type MOSFETs as nonvolatile memory (NVM) devices has received considerable interest owing to their simple device structure and compatibility with logic CMOS processing. In NOI n-type MOSFETs, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53a40a5c9f5f72da92e663098c6f2028
https://doi.org/10.7567/jjap.53.096502
https://doi.org/10.7567/jjap.53.096502
Autor:
Jeng, Erik S., Chia-Sung Chiu, Chih-Hsueh Hon, Pai-Chun Kuo, Chen-Chia Fan, Chien-Sheng Hsieh, Hui-Chun Hsu, Yuan-Feng Chen
Publikováno v:
IEEE Transactions on Electron Devices; Dec2007, Vol. 54 Issue 12, p3299-3307, 9p, 8 Black and White Photographs, 5 Diagrams, 10 Graphs
Autor:
Jeng, Erik S., Pai-Chun Kuo, Chien-Sheng Hsieh, Chen-Chia Fan, Kun-Ming Lin, Hui-Chun Hsu, Wu-Ching Chou
Publikováno v:
IEEE Transactions on Electron Devices; Oct2006, Vol. 53 Issue 10, p2517-2524, 8p, 7 Black and White Photographs, 5 Diagrams, 1 Chart, 9 Graphs