Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Chen Teng-Ke"'
Autor:
Tseng, Wei-Hao, Fang, Shao-Wei, Lu, Chia-Yang, Chuang, Hung-Yang, Chang, Fan-Wei, Lin, Guan-Yu, Chen, Tsu-Wei, Ma, Kang-Hung, Chen, Hong-Syu, Chen, Teng-Ke, Chen, Yu-Hung, Lee, Jen-Yu, Shih, Tsung-Hsiang, Ting, Hung-Che, Chen, Chia-Yu, Lin, Yu-Hsin, Hong, Hong-Jye
Publikováno v:
In Solid State Electronics January 2015 103:173-177
Autor:
Fan-Wei Chang, Yu-Hung Chen, Chen Hong-Syu, Kang-Hung Ma, Yu-Hsin Lin, Tseng Wei-Hao, Hong-Jye Hong, Tsu-Wei Chen, Hung-Yang Chuang, Guan-Yu Lin, Chia-Yang Lu, Chia-Yu Chen, Hung-Che Ting, Chen Teng-Ke, Shao-Wei Fang, Jen-Yu Lee, Tsung-Hsiang Shih
Publikováno v:
Solid-State Electronics. 103:173-177
In this work, the effects of nitrous oxide plasma treatment on the negative bias temperature stress of indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film transistors (TFTs) were reported. ITZO TFTs were more suitable for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40658d0c966eb1ee65a4ca43562b794e
https://doi.org/10.1016/j.sse.2014.07.017
https://doi.org/10.1016/j.sse.2014.07.017
Autor:
Peng-Yu Chen, Yu-Hsin Lin, Yi-Chi Chen, Hsueh-Hsin Lu, Chen Teng-Ke, Chen Kuo-Kuang, Chien-Ya Lee, Wen-Tai Chen, Tsu-Wei Chen, Yi-Hao Su, Shun-Ping Yang, Meng-Hung Hsin, Hong Shen Lin, Yu-Hung Chen
Publikováno v:
SID Symposium Digest of Technical Papers. 47:1805-1807
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baefd73601ce306cbb3a6c4538864e5a
https://doi.org/10.1002/sdtp.11074
https://doi.org/10.1002/sdtp.11074
Autor:
Chen, Yu-Hung, Hsin, Meng-Hung, Chen, Yi-Chi, Su, Yi-Hao, Chen, Wen-Tai, Chen, Teng-Ke, Chen, Tsu-Wei, Yang, Shun-Ping, Lee, Chien-Ya, Lin, Hong Shen, Chen, Peng-Yu, Chen, Kuo-Kuang, Lu, Hsueh-Hsin, Lin, Yu-Hsin
Publikováno v:
SID Symposium Digest of Technical Papers; May2016, Vol. 47 Issue 1, p1805-1807, 3p